N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect Transistors NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM Motor Controls and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. By Fairchild Semiconductor
NDB708A 's PackagesNDB708A 's pdf datasheet
NDP708A
NDP708AE
NDP708B
NDP708BE
NDB708AE
NDB708B
NDB708BE




NDB708A Pinout, Pinouts
NDB708A pinout,Pin out
This is one package pinout of NDB708A,If you need more pinouts please download NDB708A's pdf datasheet.

NDB708A Application circuits
NDB708A circuits
This is one application circuit of NDB708A,If you need more circuits,please download NDB708A's pdf datasheet.


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