P-Channel Enhancement Mode Field Effect TransistorThese P-Channel enhancement mode power field effect
Transistors NDF0610 / NDS0610 are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They CAN be used, with a minimum of effort, in most
applications requiring up to 180mA DC and CAN deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
Switch By Fairchild Semiconductor
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NDF0610 Pb-Free | NDF0610 Cross Reference | NDF0610 Schematic | NDF0610 Distributor |
NDF0610 Application Notes | NDF0610 RoHS | NDF0610 Circuits | NDF0610 footprint |