Ultra Low Noise Pseudomorphic Hj Fet (space Qualified) - Nec

The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl Gates for decreased Gate resistance and improved power handling capabilities. The mushroom Gate also results in lower noise figure and high associated gain. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. NEC's stringent quality assurance and test procedures as- sure the highest reliability and performance. By NEC Electronics Inc.
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NE24283B Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE24283B circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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