Ultra Low Noise Pseudomorphic Hj Fet - Nec

The NE32684A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl Gates for decreased Gate resistance and improved power handling capabilities. The mushroom Gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume con- sumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. By NEC Electronics Inc.
NE32684A 's PackagesNE32684A 's pdf datasheet



NE32684A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE32684A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

NE32684A Pb-Free NE32684A Cross Reference NE32684A Schematic NE32684A Distributor
NE32684A Application Notes NE32684A RoHS NE32684A Circuits NE32684A footprint