Ultra Low Noise Pseudomorphic Hj Fet - Nec

The NE32684A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl Gates for decreased Gate resistance and improved power handling capabilities. The mushroom Gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume con- sumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. By NEC Electronics Inc.