Ultra Low Noise Pseudomorphic Hj Fet - NecThe NE32684A is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl Gates for decreased Gate
resistance and improved power handling capabilities. The
mushroom Gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance. By NEC Electronics Inc.
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NE32684A Pb-Free | NE32684A Cross Reference | NE32684A Schematic | NE32684A Distributor |
NE32684A Application Notes | NE32684A RoHS | NE32684A Circuits | NE32684A footprint |