Super Low Noise Hj Fet - Nec

The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial applications. NEC's stringent quality assurance and test procedures as- sure the highest reliability and performance. By NEC Electronics Inc.
NE33200 's PackagesNE33200 's pdf datasheet



NE33200 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE33200 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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NE33200 Pb-Free NE33200 Cross Reference NE33200 Schematic NE33200 Distributor
NE33200 Application Notes NE33200 RoHS NE33200 Circuits NE33200 footprint