N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS

The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power Amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 WSi Gate lateral MOS FET), housed in a surface mount 3-pin power minimold (34 PKG) (SOT-89 type) package. The device CAN deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage. By NEC Electronics Inc.
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NE5500134 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
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