4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS

The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver Amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 WSi Gate laterally diffused MOS FET) and housed in a surface mount package. The device CAN deliver 30.0 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or CAN deliver 27 dBm output power with 50% power added efficiency at 3.5 V, respectively. By NEC Electronics Inc.
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NE5500179A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
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