3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS

The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power Amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 WSi Gate laterally diffused MOS FET) and housed in a surface mount package. The device CAN deliver 31.5 dBm output power with 62% power added efficiency at 900 MHz as AMPS final output stage Amplifier under the 3.5 V supply voltage. It also CAN deliver 35 dBm output power with 62% power added efficiency at 4.8 V, as GSM 900 class 4 final stage Amplifiers By NEC Electronics Inc.
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NE5500479A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE5500479A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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