3.5v Operation Silicon Rf Power Mosfet For 1.9 Ghz Transmission Amplifiers - Nec

The NE5510179A is an N-Channel silicon Power MOSFET specially designed as the transmission driver Amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi Gate lateral MOSFET) and housed in a surface mount package. This device CAN deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or CAN deliver 29 dBm output power at 2.8 V by varying the Gate voltage as a power control function. By NEC Electronics Inc.
NE5510179A 's PackagesNE5510179A 's pdf datasheet



NE5510179A Pinout, Pinouts
NE5510179A pinout,Pin out
This is one package pinout of NE5510179A,If you need more pinouts please download NE5510179A's pdf datasheet.

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