4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS

The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power Amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 WSi Gate laterally diffused MOS FET) and housed in a surface mount package. The device CAN deliver 33.0 dBm output power with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage. By NEC Electronics Inc.
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NE5510279A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE5510279A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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