3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power Amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi Gate laterally diffused MOS FET) and housed in a surface mount package. This device CAN deliver 32.0 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage. By NEC Electronics Inc.
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NE5520279A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE5520279A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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