3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS

The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power Amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount package. This device CAN deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V supply voltage. By NEC Electronics Inc.
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NE5520379A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE5520379A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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