3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power Amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2 technology (our WSi Gate laterally diffused MOS FET) and housed in a surface mount package. This device CAN deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage. By NEC Electronics Inc.
NE552R679A 's PackagesNE552R679A 's pdf datasheet



NE552R679A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE552R679A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

NE552R679A Pb-Free NE552R679A Cross Reference NE552R679A Schematic NE552R679A Distributor
NE552R679A Application Notes NE552R679A RoHS NE552R679A Circuits NE552R679A footprint