NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NEC's NE856M02 is an NPN silicon epitaxial Bipolar Transistor designed for medium power applications requiring high dy- namic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE856M02 is an excellent choice for Low Noise Amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications. By California Eastern Laboratories
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NE856M02-T1-AZ




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