Npn Epitaxial Silicon Transistor For Microwave High-gain Amplification - NecThe NE699M01 is an NPN high frequency silicon epitaxial
Transistor NE687 encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE699M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations. By NEC Electronics Inc.
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| NE699M01 Pb-Free | NE699M01 Cross Reference | NE699M01 Schematic | NE699M01 Distributor |
| NE699M01 Application Notes | NE699M01 RoHS | NE699M01 Circuits | NE699M01 footprint |
