N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER

The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, Analog/Digital TV-transmitter and GSM/D-AMPS/PDC cellular base station Amplifiers Dies are manufactured using our NEWMOS technology (our WSi Gate lateral MOS FET), and its nitride surface passivation and triple layer aluminum silicon metalization offer a high degree of reliability. By NEC Electronics Inc.
NEM090303M-28 's PackagesNEM090303M-28 's pdf datasheet



NEM090303M-28 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NEM090303M-28 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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