• Product pinout
  • Description
  • FDD8424H,40V Dual N & P-Channel PowerTrench MOSFET
  • These dual N and P-Channel enhancement mode Power MOSFETs FDD8424H are produced using Fairchild Semiconductors advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching ...
  • FDG8842CZ,Q1:30V/Q2: -25V Complementary PowerTrench MOSFET
  • Q1:30V/Q2: -25V Complementary PowerTrench MOSFET FDG8842CZ ,These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially ...
  • FDC6327C,Dual N & P-Channel 2.5V Specified PowerTrench MOSFET
  • These N & P-Channel 2.5V specified MOSFETs FDC6327C are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
  • FDG6322C,Dual N & P Channel Digital FET
  • These dual N & P-Channel logic level enhancement mode field effect transistors FDG6322C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
  • FDMA1032CZ,20V Complementary PowerTrench MOSFET
  • This device FDMA1032CZ is designed specifically as a single package solution for a DC/DC \'Switching\' MOSFET FDMA1032CZ in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state ...
  • FDG6321C,Dual N & P Channel Digital FET
  • These dual N & P-Channel logic level enhancement mode field effect transistors FDG6321C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
  • FDB33N25,250V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDB33N25 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDG6332C,20V N &P - Channel Power Trench MOSFET
  • The N & P-Channel MOSFETs FDG6332C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
    These devices have been ...
  • FDS4501H,Complementary PowerTrench Half-Bridge MOSFET
  • This complementary MOSFET FDS4501H half-bridge device is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
  • FDS8962C,30V Dual N & P-Channel PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS8962C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior ...
  • FDG6320C,Dual N & P Channel Digital FET
  • These dual N & P-Channel logic level enhancement mode field effect transistors FDG6320C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
  • FDJ1032C,20V Complementary PowerTrench MOSFET
  • These N & P-Channel MOSFETs FDJ1032C are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
    These devices are ...
  • FDS8960C,35V Dual N & P-Channel PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS8960C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior ...
  • FDC6333C,30V N & P-Channel PowerTrench MOSFETs
  • These N & P-Channel MOSFETs FDC6333C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
    These devices have been ...
  • FDS4559,60V Complementary PowerTrench MOSFET
  • This complementary MOSFET FDS4559 device is produced using Fairchild\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
    ...
  • FDC6420C,20V N & P-Channel PowerTrench MOSFETs
  • These N & P-Channel MOSFETs FDC6420C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
    These devices have been ...
  • FDC6321C,Dual N & P Channel, Digital FET
  • These dual N & P Channel logic level enhancement mode field effect transistors FDC6321C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
  • FDC6320C,Dual N & P Channel, Digital FET
  • These dual N & P Channel logic level enhancement mode field effec transistors FDC6320C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The ...
  • FDS8333C,30V N & P Channel PowerTrench MOSFETs
  • These N & P-Channel MOSFETs FDS8333C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
    These devices are well ...
  • FDW2520C,Complementary PowerTrench MOSFET
  • This complementary MOSFET FDW2520C device is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
    ...
  • FDS9934C,20V Complementary PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS9934C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior ...
  • FDW2521C,Complementary PowerTrench MOSFET
  • This complementary MOSFET FDW2521C device is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
    ...
  • FDC6322C,Dual N & P Channel, Digital FET
  • These dual N & P Channel logic level enhancement mode field effec transistors FDC6322C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The ...
  • FDS4895C,40V Dual N & P-Channel PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS4895C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior ...
  • FDS8958,30V Dual N & P-Channel PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS8958 are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior ...
  • FDS4885C,40V Dual N & P-Channel PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS4885C are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior ...
  • IRF7379Q,IRF7379QPbF
  • Specifically designed for Automotive applications, these , HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive ...
  • ARF1510,100-300V Operation RF POWER MOSFET FULL-BRIDGE
  • 100-300V operation ARF1510 The ARF1510 is four RF power transistor arranged in an H-Bridge con, guration. It is intended for off-line 300V operation in high power scienti, c, medical and, industrial RF power generator and ampli, er applications up to 40 ...