These dual N and P-Channel enhancement mode Power
MOSFETs FDD8424H are produced using Fairchild Semiconductors
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching ...
Q1:30V/Q2: -25V Complementary PowerTrench MOSFET FDG8842CZ ,These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchilds proprietary, high cell
density, DMOS technology. This very high density process is
especially ...
These N & P-Channel 2.5V specified MOSFETs FDC6327C are
produced using Fairchild Semiconductor\'s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching ...
These dual N & P-Channel logic level enhancement mode field effect transistors FDG6322C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
This device FDMA1032CZ is designed specifically as a single package
solution for a DC/DC \'Switching\' MOSFET FDMA1032CZ in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state ...
These dual N & P-Channel logic level enhancement mode field effect transistors FDG6321C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
These N-Channel enhancement mode power field effect transistors FDB33N25
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advanced technology has been especially tailored to minimize
on-state resistance, provide ...
The N & P-Channel MOSFETs FDG6332C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance. These devices have been ...
These dual N- and P -Channel enhancement mode power field effect transistors FDS8928A are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and ...
These dual N & P-Channel Enhancement Mode Field
Effect Transistors NDC7001C are produced using Fairchilds
proprietary, high cell density, DMOS technology. This
very high density process has been designed to
minimize on-state resistance, provide rugged ...
This complementary MOSFET FDS4501H half-bridge device is produced using Fairchilds advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These dual N- and P-Channel enhancement mode
power field effect transistors FDS8962C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior ...
These dual N & P-Channel logic level enhancement mode field effect transistors FDG6320C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
These N & P-Channel MOSFETs FDJ1032C are produced using
Fairchild Semiconductor\'s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are ...
These dual N- and P-Channel enhancement mode
power field effect transistors FDS8960C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior ...
These N & P-Channel MOSFETs FDC6333C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been ...
These dual N- and P-Channel enhancement mode power
field effect transistors SI4532DY are produced using Fairchild\'s
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and ...
This complementary MOSFET FDS4559 device is produced using
Fairchild\'s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
...
These N & P-Channel MOSFETs FDC6420C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been ...
These dual N & P Channel logic level enhancement mode field effect transistors FDC6321C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
These dual N & P Channel logic level enhancement mode field effec transistors FDC6320C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The ...
These N & P-Channel MOSFETs FDS8333C are
produced using Fairchild Semiconductors
advanced PowerTrench process that has been
especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well ...
These N & P-Channel MOSFETs FDC6020C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well ...
This complementary MOSFET FDW2520C device is produced using
Fairchilds advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
...
These dual N- and P-Channel enhancement mode
power field effect transistors FDS9934C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior ...
This complementary MOSFET FDW2521C device is produced using
Fairchilds advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
...
These dual N & P Channel logic level enhancement mode field effec transistors FDC6322C are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The ...
This Complementary N & P-Channel MOSFET FDY4000CZ has been
designed using Fairchild Semiconductors advanced Power
Trench process to optimize the rDS(ON) @ VGS=2.5V and
specify the rDS(ON) @ VGS = 1.8V. ...
This Complementary N & P-Channel MOSFET FDY4001CZ has been
designed using Fairchild Semiconductors advanced Power
Trench process to optimize the rDS(ON) @ VGS=2.5V and
specify the rDS(ON) @ VGS= 1.8V. ...
These dual N- and P-Channel enhancement mode
power field effect transistors FDS4895C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior ...
These dual N- and P-Channel enhancement mode
power field effect transistors FDS8958 are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior ...
These dual N- and P-Channel enhancement mode
power field effect transistors FDS4885C are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior ...
PHC21025 Complementary enhancement mode MOS transistors,One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
...
PHC2300 Complementary enhancement mode MOS transistors,One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
...
This Power MOSFET STS3C2F100 is the latest development of
STMicroelectronis unique \"Single Feature Size,\"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and ...
This Power MOSFET STS4C3F60L is the latest development of
STMicroelectronics unique \"Single Feature
Size,\" strip-based process. The resulting
I
transistor shows extremely high packing density
for low on-resistance, rugged avalanche ...
This Power MOSFET STS4DNF60 is the latest development of
STMicroelectronics unique single feature size,
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and ...
Specifically designed for Automotive applications, these
,
HEXFET Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive ...
100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package IRF7350 ,
These dual N and P channel HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. ...
Specifically designed for Automotive applications, these
HEXFET Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified ...
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package IRF7317 Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ...
12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package IRF7338 These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides ...
100-300V operation ARF1510 The ARF1510 is four RF power transistor arranged in an H-Bridge con, guration. It is intended for off-line 300V
operation in high power scienti, c, medical and, industrial RF power generator and ampli, er applications up to 40 ...
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
(P Channel U,MOS IV/N Channel U-MOS III) , TPC8405 Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications ...
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) , TPCF8402 Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications ...
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) , TPCP8402 Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications ...
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) , TPCP8403 Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications ...
2
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L --MOSV in One) , MP4212 High Power High Speed Switching Applications
H-Switch Driver ...
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type , MP6404 High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications ...
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) , SSM6E01TU TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) ...
Silicon P-Channel MOS Type + N-Channel MOS Type , SSM6E03TU Power Management Switch Applications
1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET
incorporated into one package. ...
