NT5TU512T4BU-37BThe 2Gb Stacked Double-Data-Rate-2 (DDR2) DRAMs is a
high-speed CMOS Double Data Rate 2 SDRAM containing
2,147,483,648 bits. It is internally configured as a octal-bank
DRAM
The 2Gb chip is organized as either 64Mbit x 4 I/O x 8 bank,
32Mbit x 8 I/O x 8 bank device. These synchronous devices
achieve high speed double-data-rate transfer rates of up to
800 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR2 DRAM key
features: (1) posted CAS with additive latency, (2) write
latency = read latency -1, (3) normal and weak strength data-
output driver, (4) variable data-output impedance adjustment
and (5) an ODT (On-Die Termination) function.
All of the control and address inputs are synchronized with a
pair of externally supplied differential Clocks Inputs are
latched at the cross point of differential Clocks (CK rising and
CK falling). All I/Os are synchronized with a single ended
DQS or differential DQS pair in a source synchronous fash-
ion. A 14 bit address bus organised components is used to
convey row, column, and bank address devices. By Nanya Techology
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