The CMOS bq3285 (RTC IC with 114x8 NVSRAM Real-Time Clock) is a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square ...
The CMOS bq3285E/L (Real-Time Clock (RTC)) is a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. The bq3285L supports 3V systems. Other bq3285E/L features include three maskable ...
The CMOS bq3285ED/LD is Real-Time Clock RTC a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. The architecture is based on the bq3285/7 RTC with added features: low-voltage ...
The CMOS bq3285LF is Y2K-Enhanced Real-TIme Clock a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. The architecture is based on the bq3285 RTC with added features: century bit, ...
The CMOS bq3287/bq3287A is a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square-wave output, and 114 bytes of ...
The CMOS bq3287/bq3287A is Real-Time Clock (RTC) Module a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square-wave ...
The CMOS bq3287E/bq3287EA is Real-Time Clock (RTC) Module a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square-wave ...
The CMOS bq3287E/bq3287EA is Real-Time Clock (RTC) Module a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square-wave ...
The CMOS bq4285 is Real-Time Clock (RTC) With NVRAM Control a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square ...
The CMOS bq4285E/L is Enhanced RTC With NVRAM Control,a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square wave ...
The CMOS bq4287 is Real-Time Clock Module With NVRAM Control a low-power microprocessor peripheral providing a time-of-day clock and 100-year calendar with alarm features and battery operation. Other features include three maskable interrupt sources, square ...
The bq4802Y/bq4802LY Parallel Real-Time Clock with CPU Supervisor and External SRAM Non-Volatile real-time clock is a low-power microprocessor peripheral that integrates a time-of-day clock, a century-based calendar, and a CPU supervisor, with package options ...
The bq4802Y/bq4802LY real-time clock is Parallel Real-Time Clock with CPU Supervisor and External SRAM Non-Volatile a low-power microprocessor peripheral that integrates a time-of-day clock, a century-based calendar, and a CPU supervisor, with package options ...
The bq4822Y RTC Module is a non-volatile 65,536-bit SRAM organized as 8192 words by 8 bits with an integral real-time clock and CPU supervisor. The CPU supervisor provides a programmable watchdog timer and a microprocessor reset. Other features include an ...
The bq4830Y RTC Module is RTC Module With 32Kx8 NVSRAM a non-volatile 262,144-bit SRAM organized as 32,768 words by 8 bits with an integral accessible real-time clock. The device combin
612f
es an internal lithium battery, quartz crystal, clock and ...
The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with an integral real-time clock and CPU supervisor. The CPU supervisor provides a programmable watchdog timer and a microprocessor reset. Other features include ...
The bq4842Y RTC Module is a non-volatile 1,048,576-bit SRAM organized as 131,072 words by 8 bits with an integral accessible real-time clock and CPU supervisor. The CPU supervisor provides a programmable watchdog timer and a microprocessor reset. Other ...
The bq4845 Real-Time Clock is a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, and a CPU ,microprocessor supervisor in a 28-pin SOIC or DIP. The bq4845 is ideal for fax machines, copiers, industrial control ...
The bq4845 Real-Time Clock is Parallel RTC With CPU Supervisor,Microprocessor Supervisors a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, and a CPU supervisor in a 28-pin SOIC or DIP. The bq4845 is ideal for fax ...
The bq4847 Real-Time Clock Module is RTC,Real Time Clocks,Real-Time Clock a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, a CPU supervisor,Microprocessor Supervisors, a battery, and a crystal in a 28-pin DIP ...
The bq4847 Real-Time Clock Module is a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, a Microprocessor Supervisors,CPU supervisor, a battery, and a crystal in a 28-pin DIP module. The part is ideal for fax ...
The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time clock. The device combines an internal lithium battery, quartz crystal, clock and power-fail chip, and a full CMOS SRAM ...
The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time clock and CPU supervisor. The CPU supervisor provides a programmable watchdog timer and a microprocessor reset. Other features ...
The CMOS bq4010/Y/LY is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4010LY is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4010Y is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4011LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4011Y is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4013LY is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4013Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control ...
The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control ...
The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4015LY is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4015Y is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. ...
The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM. The ...
The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM. The ...
The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The ...
The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The ...
The ADN2860 contains three digitally controlled nonvolatile variable resistors with very low temperature drift. Packaged in a tiny 4 mm x 4 mm LFCSP package and designed to meet GBIC/MSA standard specifications, the ADN2860 is ideal for precision optical ...
The M4TXX-BR12SH SNAPHAT M4T28-BR12SH, M4T32-BR12SH top is a detach-
able lithium power source for STs non-volatil
TIMEKEEPER surface-mount SOIC (MH) pack-
age (28- and 44-pin). ...
The M4ZXX-BR00SH SNAPHAT M4Z28-BR00SH, M4Z32-BR00SH top is a
detachable lithium power source for STs non
volatile ZEROPOWER surface-mount SOIC
(MH) package (28-pin). ...
The M48T08
M48T08Y, M48T18 TIMEKEEPER RAM is an 8K x 8 non-volatile static RAM and real
time clock which is pin and functional compatible with the DS1643. The monolithic chip is
available in two special packages to provide a highly integrated battery ...
The M48T128Y
M48T128V TIMEKEEPER RAM is a
128Kb x 8 non-volatile static RAM and real time
clock. The special DIP package provides a fully in-
tegrated battery back-up memory and real time
clock solution. The M48T128Y/M48T128V directly replaces
industry ...
The M48T129V, M48T129Y TIMEKEEPER RAM is
128 Kb x 8 non-volatile static RAM and real-tim
clock with programmable alarms and a watchdo
timer. The special DIP package provides a fully in
tegrated battery back-up memory and real-tim
clock solution. The ...
The M48T35, M48T35Y TIMEKEEPER RAM is a 32Kb x 8 non-volatile static RAM and real time
clock. The monolithic chip is available in two special packages to provide a highly integrated
battery backed-up memory and real time clock solution. ...
The M48T35AV TIMEKEEPER RAM is a 32Kbit x 8 non-volatile static RAM and real-time
clock. The monolithic chip is available in two special packages to provide a highly integrated
battery backed-up memory and real-time clock solution.
The M48T35AV is a ...
The M48T37V, M48T37Y TIMEKEEPER RAM is a 32 Kb x8 non-volatile static RAM and real time
clock. The monolithic chip is available in a special package which provides a highly
integrated battery backed-up memory and real time clock solution. ...
The M48T512Y/M48T512V TIMEKEEPER RAM is a
512Kb x 8 non-volatile static RAM and real time
clock organized as 524,288 words by 8 bits. The
special DIP package provides a fully integrated
battery back-up memory and real time clock solu-
tion. ...
The M48T58/M48T58Y TIMEKEEPER RAM is a 8Kb x 8 non-volatile static RAM and real time
clock. The monolithic chip is available in two special packages to provide a highly integrated
battery backed-up memory and real time clock solution. ...
The M440T1MV TIMEKEEPER RAM is a 16Mbit,
non-volatile static RAM organized as 1,024K by 32
bits and real time clock organized as 64 bytes by
8 bits. The special PBGA package provides a fully
integrated battery back-up memory and real time
clock solution. ...
The M48T59
M48T59Y, M48T59V TIMEKEEPER RAM is an
8 Kb x8 non-volatile static RAM and real time
clock. The monolithic chip is available in two spe-
cial packages to provide a highly integrated bat-
tery backed-up memory and real time clock
solution. ...
The M48Z02, M48Z12 ZEROPOWER RAM is a 2K x 8 non-volatile static RAM which is pin and
functional compatible with the DS1220.
A special 24-pin, 600mil DIP CAPHAT, package houses the M48Z02/12 silicon with a long
life lithium button cell to form a highly ...
The M48Z128
M48Z128Y, M48Z128V ZEROPOWER RAM is a
128 Kbit x 8 non-volatile static RAM organized
as131,072 words by 8 bits. The device combines
an internal lithium battery, a CMOS SRAM and a
control circuit in a plastic, 32-pin DIP module. ...
The M48Z129Y/M48Z129V ZEROPOWER SRAM is a
1,048,576 bit non-volatile static RAM organized as
131,072 words by 8 bits. The device combines an
internal lithium battery, a CMOS SRAM and a con-
trol circuit in a plastic 32-pin DIP Module. The ...
The M48Z2M1Y/M48Z2M1V ZEROPOWER RAM is a non-
volatile 16,777,216-bit, Static RAM organized as
2,097,152 words by 8 bits. The device combines
two internal lithium batteries, CMOS SRAMs and a
control circuit in a plastic 36-pin DIP, long Module. ...
The M48Z32V ZEROPOWER RAM is a 32K x 8, non-volatile static RAM that integrates
power-fail deselect circuitry and battery control logic on a single die. ...
The M48Z35,M48Z35Y ZEROPOWER RAM is a 32K x 8, non-volatile static RAM that integrates
power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is
available in two special packages to provide a highly integrated battery ...
The M48Z35AV ZEROPOWER RAM is a 32Kbit x 8, non-volatile static RAM that integrates
power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is
available in two special packages to provide a highly integrated battery ...
M48Z512A
M48Z512AY, M48Z512AV ZEROPOWER RAM is a
non-volatile, 4,194,304-bit Static RAM organized
as 524,288 words by 8 bits. The devices combine
an internal lithium battery, a CMOS SRAM and a
control circuit in a plastic, 32-pin DIP Module. ...
The M48Z58, M48Z58Y ZEROPOWER RAM is an 8Kbit x 8 non-volatile static RAM that integrates
power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is
available in two special packages to provide a highly integrated ...
The M41T11is a low power Serial Real Time Clock with 56 bytes of NVRAM. A built-in
32.768kHz oscillator (external crystal controlled) and the first 8 bytes of the RAM are used
for the clock/calendar function and are configured in binary coded decimal (BCD) ...
The M41T56 is a low power, serial real-time clock with 56 bytes of NVRAM. A built-in
32,768Hz oscillator (external crystal controlled) and the first 8 bytes of the RAM are used for
the clock/calendar function and are configured in binary coded decimal ...
The DS3070W consists of a static RAM, a nonvolatile (NV) controller, a year 2000-compliant real-time clock (RTC), and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS3050W consists of a static RAM, a nonvolatile
(NV) controller, a year 2000-compliant real-time clock
(RTC), and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a surface-mount module with a 256-ball BGA ...
The DS3065W consists of a static RAM, a nonvolatile
(NV) controller, a year 2000-compliant real-time clock
(RTC), and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a surface-mount module with a 256-ball BGA ...
The DS3045W consists of a static RAM, a nonvolatile
(NV) controller, a year 2000-compliant real-time clock
(RTC), and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a surface-
mount module with a 256-ball BGA ...
The DS2045 is a 1Mb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS2045 is a 1Mb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS2030 is a 256kb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS2030 is a 256kb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS2030W is a 256kb reflowable nonvolatile (NV)
SRAM, which consists of a static RAM (SRAM), an NV
controller, and an internal rechargeable manganese
lithium (ML) battery. These components are encased in
a surface-mount module with a 256-ball BGA ...
The DS2045W is a 1Mb reflowable nonvolatile (NV)
SRAM, which consists of a static RAM (SRAM), an NV
controller, and an internal rechargeable manganese
lithium (ML) battery. These components are encased in
a surface-mount module with a 256-ball BGA ...
The DS2050W is a 4Mb reflowable nonvolatile (NV)
SRAM, which consists of a static RAM (SRAM), an NV
controller, and an internal rechargeable manganese
lithium (ML) battery. These components are encased in
a surface-mount module with a 256-ball BGA ...
The DS2030L is a 256kb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS2045L is a 1Mb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS2070W is a 16Mb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. ...
The DS3030W consists of a static RAM, a nonvolatile
(NV) controller, a year 2000-compliant real-time clock
(RTC), and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a surface-
mount module with a 256-ball BGA ...
The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance ...
The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance ...
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. ...
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. ...
The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. ...
The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance ...
The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance ...
The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance ...
The DS1245 1024k Nonvolatile (NV) SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an ...
The DS1245 1024k Nonvolatile (NV) SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an ...
The DS1249 2048k Nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance ...
The DS1249 2048k Nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance ...
The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance ...
The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an ...
The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an ...
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an ...
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance ...
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance ...
