1 310 Nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

The NX5315EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) Laser Diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. By California Eastern Laboratories
NX5315EH 's PackagesNX5315EH 's pdf datasheet



NX5315EH Pinout, Pinouts
NX5315EH pinout,Pin out
This is one package pinout of NX5315EH,If you need more pinouts please download NX5315EH's pdf datasheet.

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