1 550 Nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) Laser Diode This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain Reflectometer (OTDR). By NEC Electronics Inc.

NX5530SA 's Packages	NX5530SA 's pdf datasheet
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NX5530SA Pinout, Pinouts
NX5530SA pinout,Pin out

This is one package pinout of NX5530SA,If you need more pinouts please download NX5530SA's pdf datasheet.

NX5530SA circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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1 550 Nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

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