1 550 Nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONSThe NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) Laser Diode This device is specified to operate under
pulsed condition and designed for light source of Optical Time Domain
Reflectometer (OTDR). By NEC Electronics Inc.
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NX5530SA Pb-Free | NX5530SA Cross Reference | NX5530SA Schematic | NX5530SA Distributor |
NX5530SA Application Notes | NX5530SA RoHS | NX5530SA Circuits | NX5530SA footprint |