• Product pinout
  • Description
  • NTB25P06,Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
  • This Power MOSFET NTB25P06 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well ...
  • NTD2955,Power MOSFET -60 V, -12 A, P-Channel DPAK
  • This Power MOSFET NTD2955 is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well ...
  • FDFS2P102,Integrated P-Channel MOSFET And Schottky Diode
  • Fairchild Semiconductor\'s FDFS2P102 combines the exceptional performance of Fairchild\'s high cell density MOSFET with a very low forward drop voltage Schottky barier rectifier in an SO-8 package. this device is designed specifically as a single package ...
  • FDC638APZ,-20V P-Channel 2.5V PowerTrench Specified MOSFET
  • This P-Channel 2.5V specified MOSFET FDC638APZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDMA1023PZ,-20V Dual P-Channel PowerTrench MOSFET
  • This device FDMA1023PZ is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum ...
  • FDMA530PZ,-30V P-Channel PowerTrench MOSFET
  • This device FDMA530PZ is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low onstate resistance.
    The MicroFET 2X2 package offers exceptional thermal ...
  • FDPF14N30,300V N-Channel MOSFET
  • These NChannel enhancement mode power field effect transistors FDPF14N30 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
  • FDZ193P,-20V P-Channel 1.7V PowerTrench WL-CSP MOSFET
  • Designed on Fairchild\'s advanced 1.7V PowerTrench process with state of the art \"low pitch\" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ193P embodies a breakthrough in packaging technology which ...
  • FDC610PZ,-30V P-Channel PowerTrench MOSFET
  • This PChannel MOSFET FDC610PZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for superior switching performance. These devices are ...
  • FDD4141,-40V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDD4141 has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching ...
  • FDC365P,-35V P-Channel Power Trench MOSFET
  • This P-Channel MOSFET FDC365P has been produced using Fairchild Semiconductor\'s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
    ...
  • FDMA510PZ,-20V Single P-Channel PowerTrench MOSFET
  • This device FDMA510PZ is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
    The MicroFET 2X2 package offers exceptional ...
  • FDMJ1023PZ,-20V Dual P-Channel PowerTrench MOSFET
  • This dual P-Channel MOSFET FDMJ1023PZ uses Fairchild\'s advanced low voltage PowerTrench process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It ...
  • FDS9958,-60V Dual P-Channel PowerTrench MOSFET
  • These P-channel logic level specified MOSFETs FDS9958 are produced using Fairchild Semiconductor\'s advanced PowerTrenchprocess that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDS4141,-40V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS4141 has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching ...
  • FDC637BNZ,20V N-Channel 2.5V Specified PowerTrench MOSFET
  • This N-Channel 2.5V specified MOSFET FDC637BNZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDS4435BZ,30V P-Channel PowerTrench MOSFET
  • This PChannel MOSFET FDS4435BZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load switching applications ...
  • FDZ293P,-20V P-Channel 2.5 V Specified PowerTrench BGA MOSFET
  • Combining Fairchilds advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine ...
  • FDS6675BZ,-30V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS6675BZ is producted using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
    This device is well suited for Power Management and load switching ...
  • FDZ191P,-20V P-Channel 1.5V Specified PowerTrench WL-CSP MOSFET
  • Designed on Fairchild\'s advanced 1.5V PowerTrench process with state of the art \"low pitch\" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ191P embodies a breakthrough in packaging technology which ...
  • FDS6679AZ,-30V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS6679AZ is producted using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
    This device is well suited for Power Management and load switching ...
  • NDS0610,P-Channel Enhancement Mode Field Effect Transistor
  • These P-Channel enhancement mode field effect transistors NDS0610 are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable ...
  • FDV304P,P-Channel Digital FET
  • This P-Channel enhancement mode field effect transistors FDV304P is produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This ...
  • FDZ291P,-20V P-Channel 1.5 V Specified PowerTrench BGA MOSFET
  • Combining Fairchilds advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine ...
  • FDC640P,P-Channel 2.5V PowerTrench Specified MOSFET
  • This P-Channel 2.5V specified MOSFET FDC640P uses a rugged gate version of Fairchilds advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
    ...
  • BSS84,P-Channel Enhancement Mode Field Effect Transistor
  • These P-Channel enhancement mode field effect transistors BSS84 are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and ...
  • FDMA1027P,-20V Dual P-Channel PowerTrench MOSFET
  • This device FDMA1027P is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum ...
  • FDC6306P,Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • These P-Channel 2.5V specified MOSFETs FDC6306P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
  • FDC6506P,Dual P-Channel Logic Level PowerTrench MOSFET
  • These P-Channel logic level MOSFETs FDC6506P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
  • FDJ1027P,-20V P-Channel 1.8V Specified PowerTrench MOSFET
  • -20V P-Channel 1.8V Specified PowerTrench MOSFET FDJ1027P This dual P-Channel 1.8V speci
  • ed MOSFET uses Fairchild advanced low voltage PowerTrench process. Packaged in FLM SC75, the R and thermal properties of the device ar DS(ON) optimized for ...
  • FDN358P,Single P-Channel, Logic Level, PowerTrench MOSFET
  • This P-Channel Logic Level MOSFET FDN358P is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching ...
  • FDN336P,Single P-Channel Logic Level PowerTrench MOSFET
  • This P-Channel 2.5V specified MOSFET FDN336P is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • NDS0605,P-Channel Enhancement Mode Field Effect Transistor
  • These P-Channel enhancement mode power field effect transistors NDS0605 are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and ...
  • FQD7P20,200V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQD7P20 are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior ...
  • SI3443DV,P-Channel 2.5V Specified PowerTrench MOSFET
  • This P-Channel 2.5V specified MOSFET SI3443DV is produced using Fairchild\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
    These ...
  • FDV302P,Digital FET,P-Channel
  • This P-Channel logic level enhancement mode field effect transistor FDV302P is produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device ...
  • FDS8958A,Dual N & P-Channel PowerTrench MOSFET
  • These dual N- and P-Channel enhancement mode power field effect transistors FDS8958A are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior ...
  • FDS4935BZ,-30V Dual P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS4935BZ has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
    These MOSFETs feature faster switching and ...
  • FDC638P,Single P-Channel 2.5V Specified PowerTrench MOSFET
  • This P-Channel 2.5V specified MOSFET FDC638P is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDS9435A,30V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS9435A is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
    ...
  • FDN352AP,-30V Single P-Channel, Trench MOSFET
  • This P-Channel Logic Level MOSFET FDN352AP is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDC602P,P-Channel 2.5V Specified PowerTrench MOSFET
  • This P-Channel 2.5V specified MOSFET FDC602P uses a rugged gate version of Fairchilds advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
    ...
  • FDN360P,Single P-Channel PowerTrench MOSFET
  • This P-Channel Logic Level MOSFET FDN360P is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
  • FDMA1029PZ,-20V Dual P-Channel PowerTrench MOSFET
  • This device FDMA1029PZ is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum ...
  • FDC6312P,Dual P-Channel 1.8V PowerTrench Specified MOSFET
  • These P-Channel 1.8V specified MOSFETs FDC6312P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
  • FDG312P,P-Channel 2.5V Specified PowerTrench MOSFET
  • This P-Channel MOSFET FDG312P is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ...
  • FDS6875,Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • These P-Channel 2.5V specified MOSFETs FDS6875 are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDN302P,P-Channel 2.5V Specified PowerTrench MOSFET
  • This P-Channel 2.5V specified MOSFET FDN302P uses a rugged gate version of Fairchilds advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
    ...
  • FDS4465,P-Channel 1.8V Specified PowerTrench MOSFET
  • This P-Channel 1.8V specified MOSFET FDS4465 is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).
    ...
  • FQD11P06,60V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQD11P06 are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior ...
  • FDG6304P,Dual P-Channel Digital FET
  • These dual P-Channel logic level enhancement mode field effect transistors FDG6304P are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This ...
  • FQPF27P06,60V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQPF27P06 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDG6318PZ,Dual P-Channel, Digital FET
  • These dual P-Channel logic level enhancement mode MOSFET FDG6318PZ are produced using Fairchild Semiconductors especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal ...
  • FDD6685,30V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDD6685 is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
    ...
  • FQD17P06,60V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQD17P06 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDC6318P,Dual P-Channel 1.8V PowerTrench MOSFET
  • These P-Channel 1.8V specified MOSFETs FDC6318P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
  • FDS4935A,Dual 30V P-Channel PowerTrench® MOSFET
  • This P-Channel MOSFET FDS4935A is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 20V).
    ...
  • FDC6310P,Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • These P-Channel 2.5V specified MOSFETs FDC6310P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
  • FDS6673BZ,-30V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS6673BZ is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
    This device is well suited for Power Management and load switching ...
  • FQP27P06,60V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQP27P06 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDG6306P,P-Channel 2.5V Specified PowerTrench MOSFET
  • This P-Channel 2.5V specified MOSFET FDG6306P is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
    ...
  • FQD5P20,200V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQD5P20 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior ...
  • FQD12P10,100V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQD12P10 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FQPF17P06,60V P-Channel QFET
  • These P-Channel enhancement mode power field effect transistors FQPF17P06 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDS4675,40V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDS4675 is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).
    ...