This Power MOSFET NTB25P06 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well ...
Power MOSFET NTD25P03L -25 A, -30 V Logic Level P-Channel DPAK,Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a ...
This Power MOSFET NTD2955 is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well ...
This device FDFMA2P853 is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low ...
The FDFS2P753Z combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution ...
The FDFS2P106A combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution ...
This P-Channel 2.5V specified MOSFET FDW6923 is a rugged
gate version of Fairchild Semiconductors advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution ...
The FDFS2P103 combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution ...
The FDFS2P102A combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC ...
The FDFS2P103A combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC ...
Fairchild Semiconductor\'s FDFS2P102 combines the exceptional performance of Fairchild\'s high cell density MOSFET with a very low forward drop voltage Schottky barier rectifier in an SO-8 package.
this device is designed specifically as a single package ...
FDFMC2P120 combines the exceptional performance
of Fairchild\'s PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution ...
This P-Channel 2.5V specified MOSFET FDC638APZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
This device FDMA1023PZ is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultraportable
applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum ...
This device FDMA530PZ is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low onstate resistance. The MicroFET 2X2 package offers exceptional thermal ...
These NChannel enhancement mode power field effect transistors FDPF14N30 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
Designed on Fairchild\'s advanced 1.7V PowerTrench process with state of the art \"low pitch\" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ193P embodies a breakthrough in packaging technology which ...
This PChannel MOSFET FDC610PZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for superior switching performance. These devices are ...
This P-Channel MOSFET FDG332PZ uses Fairchilds advanced low
voltage PowerTrench process. It has been optimized for
battery power management applications. ...
This P-Channel MOSFET FDD4141 has been produced using Fairchild
Semiconductors proprietary PowerTrench technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching ...
This P-Channel MOSFET FDC365P has been produced using Fairchild Semiconductor\'s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. ...
This device FDMA510PZ is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional ...
This dual P-Channel MOSFET FDMJ1023PZ uses Fairchild\'s advanced low voltage PowerTrench process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It ...
These P-channel logic level specified MOSFETs FDS9958 are produced using Fairchild Semiconductor\'s advanced PowerTrenchprocess that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
This P-Channel MOSFET FDS4141 has been produced using Fairchild
Semiconductors proprietary PowerTrench technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the applications and optimized
switching ...
This N-Channel 2.5V specified MOSFET FDC637BNZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
This PChannel MOSFET FDS4435BZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance.
This device is well suited for Power Management and load switching applications ...
Combining Fairchilds advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ299P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine ...
This P-Channel MOSFET FDS6675BZ is producted using Fairchild
Semiconductors advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance. This device is well suited for Power Management and load
switching ...
Designed on Fairchild\'s advanced 1.5V PowerTrench process with state of the art \"low pitch\" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ191P embodies a breakthrough in packaging technology which ...
This P-Channel MOSFET FDS6679AZ is producted using Fairchild
Semiconductors advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance. This device is well suited for Power Management and load
switching ...
These P-Channel enhancement mode field effect transistors NDS0610 are produced using Fairchilds proprietary,
high cell density, DMOS technology. This very high density process has been designed to minimize on-state
resistance, provide rugged and reliable ...
This P-Channel enhancement mode field effect transistors FDV304P is produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This ...
Combining Fairchilds advanced 1.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine ...
This P-Channel 2.5V specified MOSFET FDC640P uses a rugged
gate version of Fairchilds advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V 12V).
...
These P-Channel enhancement mode field effect
transistors BSS84 are produced using Fairchilds proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-state
resistance, provide rugged and ...
These P-Channel logic level enhancement mode power field effect transistors NDS332P are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
This device FDMA1027P is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum ...
These P-Channel 2.5V specified MOSFETs FDC6306P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
These P-Channel logic level MOSFETs FDC6506P are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching ...
-20V P-Channel 1.8V Specified PowerTrench MOSFET FDJ1027P This dual P-Channel 1.8V speci
ed MOSFET uses Fairchild
advanced low voltage PowerTrench process. Packaged in FLM
SC75, the R and thermal properties of the device ar
DS(ON)
optimized for ...
This P-Channel Logic Level MOSFET FDN358P is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior sw itching ...
This P-Channel 2.5V specified MOSFET FDN338P uses
Fairchilds advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
...
This P-Channel 2.5V specified MOSFET FDN336P is produced
using Fairchild Semiconductors advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching ...
These P-Channel enhancement mode power field effect transistors NDS0605 are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and ...
These P-Channel enhancement mode power field effect
transistors FQD7P20 are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior ...
This P-Channel 2.5V specified MOSFET SI3443DV is produced
using Fairchild\'s advanced PowerTrench process that
has been especially tailored to minimize on-state resistance
and yet maintain low gate charge for superior switching performance.
These ...
This P-Channel logic level enhancement mode field effect transistor FDV302P is produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device ...
This P-Channel Logic Level MOSFET FDC658AP is produced using
Fairchild\'s advanced PowerTrench process. It has been
optimized for battery power management applications. ...
These dual N- and P-Channel enhancement mode
power field effect transistors FDS8958A are produced using
Fairchild Semiconductors advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior ...
This dual P-Channel 1.8V specified MOSFET FDC6036P uses
Fairchilds advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the RDS(ON) and
thermal properties of the device are optimized for
battery power management applications. ...
This P-Channel MOSFET FDS4935BZ has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and ...
This P-Channel 1.8V specified MOSFET FDN304P uses
Fairchilds advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
...
This P-Channel 2.5V specified MOSFET FDC638P is produced
using Fairchild Semiconductors advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching ...
SuperSOT-3 N-Channel logic level enhancement mode power field effect transistors FDN357N are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...
This 60V P-Channel MOSFET NDT2955 is produced using
Fairchild Semiconductors high voltage Trench process.
It has been optimized for power management
plications. ...
This P-Channel MOSFET FDS9435A is a rugged gate version of
Fairchild Semiconductors advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V 25V). ...
This P-Channel Logic Level MOSFET FDN352AP is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching ...
This P-Channel 2.5V specified MOSFET FDC602P uses a rugged
gate version of Fairchilds advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V 12V).
...
This P-Channel Logic Level MOSFET FDN360P is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
This device FDMA1029PZ is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum ...
These P-Channel 1.8V specified MOSFETs FDC6312P are
produced using Fairchild Semiconductor\'s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching ...
This P-Channel MOSFET FDG312P is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ...
This P-Channel 1.8V specified MOSFET FDC604P uses
Fairchild\'s low voltage PowerTrench process. It has
been optimized for battery power management
applications. ...
This P-Channel 1.8V specified MOSFET FDC606P uses
Fairchilds low voltage PowerTrench process. It has
been optimized for battery power management
applications. ...
These P-Channel 2.5V specified MOSFETs FDS6875 are produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
This P-Channel 2.5V specified MOSFET FDN302P uses a rugged
gate version of Fairchilds advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V 12V).
...
This P-Channel 1.8V specified MOSFET FDG6316P uses
Fairchilds advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications. ...
This P-Channel Logic Level MOSFET FDC654P is produced
using Fairchilds advanced PowerTrench process. It
has been optimized for battery power management
applications. ...
This P-Channel 1.8V specified MOSFET FDS4465 is a rugged
gate version of Fairchild Semiconductors advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V 8V).
...
This P-Channel Logic Level MOSFET FDN340P is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These P-Channel enhancement mode power field effect
transistors FQD11P06 are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to
minimize on-state resistance, provide superior ...
These dual P-Channel logic level enhancement mode field effect transistors FDG6304P are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This ...
These P-Channel enhancement mode power field effect
transistors FQPF27P06 are produced using Fairchild\'s proprietary,
planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This P-Channel 2.5V specified MOSFET FDS6375 is a rugged
gate version of Fairchild Semiconductors advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 8V) ...
This P-Channel 1.8V specified MOSFET FDN306P uses
Fairchilds advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications. ...
These dual P-Channel logic level enhancement mode
MOSFET FDG6318PZ are produced using Fairchild Semiconductors
especially tailored to minimize on-state resistance. This
device has been designed especially for bipolar digital
transistors and small signal ...
This P-Channel MOSFET FDD6685 is a rugged gate version of
Fairchild Semiconductors advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V 25V). ...
This P-Channel -2.5V specified MOSFET FDJ129P uses
Fairchilds advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications. ...
This Dual P-Channel MOSFET FDY2000PZ has been designed
using Fairchild Semiconductor\'s advanced Power
Trench process to optimize the RDS(ON) @ VGS = - 2.5v. ...
These P-Channel enhancement mode power field effect
transistors FQD17P06 are produced using Fairchild\'s proprietary,
planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This device FDMA291P is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
The MicroFET 2x2 package offers exceptional thermal performance ...
These P-Channel 1.8V specified MOSFETs FDC6318P are
produced using Fairchild Semiconductor\'s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching ...
This P-Channel MOSFET FDS4935A is a rugged gate version of
Fairchild Semiconductors advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V 20V). ...
These P-Channel 2.5V specified MOSFETs FDC6310P are
produced using Fairchild Semiconductor\'s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching ...
These P-Channel logic level enhancement mode power field effect transistors NDC652P are produced using Fairchild\'s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These ...
This P-Channel MOSFET FDS6673BZ is produced using Fairchild
Semiconductors advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance. This device is well suited for Power Management and
load switching ...
This P-Channel 2.5V specified MOSFET FDC634P uses
Fairchilds low voltage PowerTrench process. It has
been optimized for battery power management
applications. ...
These P-Channel enhancement mode power field effect
transistors FQP27P06 are produced using Fairchild\'s proprietary,
planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This P-Channel 2.5V specified MOSFET FDG6306P is a rugged
gate version of Fairchild Semiconductors advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 12V).
...
These P-Channel enhancement mode power field effect
transistors FQD5P20 are produced using Fairchild\'s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior ...
These P-Channel enhancement mode power field effect
transistors FQD12P10 are produced using Fairchild\'s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
These P-Channel enhancement mode power field effect
transistors FQPF17P06 are produced using Fairchild\'s proprietary,
planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This Single P-Channel MOSFET FDY100PZ has been designed
using Fairchild Semiconductor\'s advanced Power
Trench process to optimize the RDS(ON) @ VGS = -2.5v. ...
This P-Channel MOSFET FDS4675 is a rugged gate version of
Fairchild Semiconductors advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V - 20V).
...
