Trenchmos Transistor Standard Level Fet - Nxp SemiconductorsN-channel enhancement mode
standard level field-effect power
Transistor PHB55N03T in a plastic envelope
suitable for surface mounting using
trench technology. The device
features very low on-state resistance
and has integral Zener Diodes giving
ESD protection up to 2kV. It is
intended for use in DC-DC
converters and general purpose
switching applications. By NXP Semiconductors
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PHB55N03T Pb-Free | PHB55N03T Cross Reference | PHB55N03T Schematic | PHB55N03T Distributor |
PHB55N03T Application Notes | PHB55N03T RoHS | PHB55N03T Circuits | PHB55N03T footprint |