Trenchmos Transistor Logic Level Fet - Nxp Semiconductors

N-channel enhancement mode Logic level field-effect Power Transistor PHB80N06LT in a plastic envelope suitable for surface mounting. Using trench technology the device features very low on-state resistance and has integral zener Diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. By NXP Semiconductors
PHB80N06LT 's PackagesPHB80N06LT 's pdf datasheet



PHB80N06LT Pinout, Pinouts
PHB80N06LT pinout,Pin out
This is one package pinout of PHB80N06LT,If you need more pinouts please download PHB80N06LT's pdf datasheet.

PHB80N06LT Application circuits
PHB80N06LT circuits
This is one application circuit of PHB80N06LT,If you need more circuits,please download PHB80N06LT's pdf datasheet.


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