Trenchmos Transistor Standard Level Fet - Nxp Semiconductors

N-channel enhancement mode standard level field-effect power Transistor PHB80N06T in a plastic envelope suitable for surface mounting. Using trench technology the device features very low on-state resistance and has integral Zener Diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. By NXP Semiconductors
PHB80N06T 's PackagesPHB80N06T 's pdf datasheet



PHB80N06T Pinout, Pinouts
PHB80N06T pinout,Pin out
This is one package pinout of PHB80N06T,If you need more pinouts please download PHB80N06T's pdf datasheet.

PHB80N06T Application circuits
PHB80N06T circuits
This is one application circuit of PHB80N06T,If you need more circuits,please download PHB80N06T's pdf datasheet.


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