LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. By Infineon Technologies Corporation
PTF181301 's PackagesPTF181301 's pdf datasheet

PTF181301 Pinout, Pinouts
PTF181301 pinout,Pin out
This is one package pinout of PTF181301,If you need more pinouts please download PTF181301's pdf datasheet.

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