Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHzThe PTFA071701GL and PTFA071701HL are 170-watt, LDMOS
FETs designed for use in cellular power Amplifiers in the 725 to 770
MHz frequency band. Features include internal I/O matching, and
thermally-enhanced, plastic open-cavity packages with copper base.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability. By Infineon Technologies Corporation
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| PTFA071701GL Pb-Free | PTFA071701GL Cross Reference | PTFA071701GL Schematic | PTFA071701GL Distributor |
| PTFA071701GL Application Notes | PTFA071701GL RoHS | PTFA071701GL Circuits | PTFA071701GL footprint |
