Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MH

The PTFA081501E and PTFA081501F are thermally-enhanced, , 150-watt, internally matched GOLDMOS FETs intended for ultra- linear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. By Infineon Technologies Corporation
PTFA081501E 's PackagesPTFA081501E 's pdf datasheet

PTFA081501E Pinout, Pinouts
PTFA081501E pinout,Pin out
This is one package pinout of PTFA081501E,If you need more pinouts please download PTFA081501E's pdf datasheet.

PTFA081501E Application circuits
PTFA081501E circuits
This is one application circuit of PTFA081501E,If you need more circuits,please download PTFA081501E's pdf datasheet.

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