Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MH

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power Amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. By Infineon Technologies Corporation
PTFA181001E 's PackagesPTFA181001E 's pdf datasheet
PTFA181001F




PTFA181001E Pinout, Pinouts
PTFA181001E pinout,Pin out
This is one package pinout of PTFA181001E,If you need more pinouts please download PTFA181001E's pdf datasheet.

PTFA181001E Application circuits
PTFA181001E circuits
This is one application circuit of PTFA181001E,If you need more circuits,please download PTFA181001E's pdf datasheet.


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