PTFA211801E / PTFA211801F - 180 W PTFA 211801E / PTFA211801F - 180 W PTFA211801E By Infineon Technologies Corporation

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PTFA211801E Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
PTFA211801E circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

• PTFA211001E, Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 ?2170 MHz
• PTFA210301E, PTFA 210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MH
• PTFA210701E, Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MH
• PTFA212001E, Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 ?2170 MHz
• PTFA081501E, Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MH
• NEM091803S-28, N-CHANNEL SILICON POWER LDMOS FET FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER
• AGR09130E, 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
• NE5500479A, 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS
• AGR18125E, 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
• PTF191601E, Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MH
• PTF080101M, High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MH
• NE5500179A, 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
• NE55410GR, N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF To L-BAND SINGLE-END POWER AMPLIFIER

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