The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 ...
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V ...
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an ...
Power MOSFET NTB18N06L 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB23N03R
23 Amps, 25 Volts
2
N-Channel D PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits. ...
This Power MOSFET NTB25P06 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well ...
Power MOSFET NTB30N06L 30 Amps, 60 Volts, Logic Level,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB30N06 30 Amps, 60 Volts N Channel D2PAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB45N06 45 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB60N06 60 V, 60 A, N-Channel D2PAK,Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. ...
Power MOSFET NTB85N03 85 Amps, 28 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB90N02 90 Amps, 24 Volts N-Channel D2Pak,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD18N06L 18 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD20N03L27 20 Amps, 30 Volts,This logic level vertical power MOSFET is a general purpose part that provides the \"best of design\" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The ...
Power MOSFET NTD20N06L 20 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD80N02 24 V, 80 A, N-Channel DPAK,N Channel DPAKDesigned for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD24N06L 24 Amps, 60 Volts, Logic Level, N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD25P03L -25 A, -30 V Logic Level P-Channel DPAK,Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a ...
This Power MOSFET NTD2955 is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well ...
Power MOSFET NTD3055-094 12 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055-150 60 V, 9.0 A, N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055L104 12 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055L170 9.0 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD32N06L 32 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTP27N06 27 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTP75N06 75 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
This device FDFMA2P857 is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward ...
This device FDFMA2N028Z is designed specifically as a single package solution for a boost topology in cellular handset and other ultraportable applications. It features a MOSFET with low onstate resistance, and an independently connected schottky diode with ...
This device FDFMA2P029Z is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low ...
The FDFS6N548 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package. This device is designed specifically as a single package solution
for ...
The FDFS2P753AZ offers a single package solution for DC/DC
conversion. It combines an excellent Fairchild’s PowerTrench
MOSFET with a Schottky diode in an SO-8 package. The
MOSFET features a low on-state resistance and an optimized
gate charge to ...
This device FDFMA2P853 is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low ...
The FDFS2P753Z combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution ...
The FDFS6N754 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO-
8 package. This device is designed specifically as a single package
solution for ...
FDFM2N111 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for ...
FDFM2P110 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for ...
This device FDFMA3N109 is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and onstate
resistance, and an ...
The FDFS2P106A combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution ...
This P-Channel 2.5V specified MOSFET FDW6923 is a rugged
gate version of Fairchild Semiconductors advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution ...
The FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky diode into a single
surface mount power package. The MOSFET and Schottky
diode are isolated inside the package. The general purpose
pinout has been chosen to ...
The FDFS2P103 combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution ...
The FDFS2P102A combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC ...
The FDFS2P103A combines the exceptional
performance of Fairchild\'s PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC ...
Fairchild Semiconductor\'s FDFS2P102 combines the exceptional performance of Fairchild\'s high cell density MOSFET with a very low forward drop voltage Schottky barier rectifier in an SO-8 package.
this device is designed specifically as a single package ...
FDFMC2P120 combines the exceptional performance
of Fairchild\'s PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution ...
This N-Channel 1.8V specified MOSFET FDFC3N108 uses
Fairchilds advanced low voltage PowerTrench process.
It is combined with a low forward drop Schottky that is
isolated from the MOSFET, providing a compact power
solution for battery power management and ...
These dual N and P-Channel enhancement mode Power
MOSFETs FDD8424H are produced using Fairchild Semiconductors
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching ...
This P-Channel 2.5V specified MOSFET FDC638APZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
This device FDMS9620S includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss \"High Side\" MOSFET ...
This device FDMA1023PZ is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultraportable
applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum ...
This NChannel MOSFET FDB8447L has been produced using Fairchild Semiconductor\'s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. ...
This device FDMA530PZ is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low onstate resistance. The MicroFET 2X2 package offers exceptional thermal ...
30V N-Channel PowerTrench MOSFET FDMS8692 ,The FDMS8692 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r while maintaining excellent ...
These NChannel enhancement mode power field effect transistors FDB14N30 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
Q1:30V/Q2: -25V Complementary PowerTrench MOSFET FDG8842CZ ,These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchilds proprietary, high cell
density, DMOS technology. This very high density process is
especially ...
This device includes two specialized MOSFETs FDMS9600S in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss \"High Side\" MOSFET is ...
500V N-Channel MOSFET FDPF20N50FT , FRFET,These N-Channel enhancement mode power field effect transistors
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to ...
This NChannel MOSFET FDS8813NZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load switching applications ...
Designed on Fairchild\'s advanced 1.7V PowerTrench process with state of the art \"low pitch\" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ193P embodies a breakthrough in packaging technology which ...
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the ...
The FDMS8680 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. ...
This PChannel MOSFET FDC610PZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for superior switching performance. These devices are ...
This P-Channel MOSFET FDG332PZ uses Fairchilds advanced low
voltage PowerTrench process. It has been optimized for
battery power management applications. ...
This P-Channel MOSFET FDD4141 has been produced using Fairchild
Semiconductors proprietary PowerTrench technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching ...
These N-Channel enhancement mode power field effect
transistors FDD6N50F are produced using Failchild\'s proprietary, planar
stripe, DMOS technology. This advance technology has been especially tailored to
minimize on-state resistance, provide ...
These N-Channel enhancement mode power field effect transistors FDPF13N50FT
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
These N-Channel enhancement mode power field effect
transistors FDP12N50 are produced using Fairchild\'s proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
These N-Channel enhancement mode power field effect transistors FQPF10N50CF
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advanced technology has been especially tailored to minimize
on-state resistance, provide ...
This N-Channel MOSFET FDPF2710T is produced using Fairchild Semiconductors
advanced PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet
maintain superior switching performance. 25A, 250V, RDS(on) = 36.3m& ...
These N-Channel enhancement mode power field effect transistors FDA33N25
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
This N-channel power MOSFET HUF75344A3 is produced using Fairchild
Semiconductors innovative UItraFET process. This advanced
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device ...
These NChannel enhancement mode power field effect transistors FDP7N50 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
These N-Channel enhancement mode power field effect
transistors FDPF12N50T are produced using Fairchild\'s proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This N-Channel MOSFET FDB8453LZ is produced using Fairchild
Semiconductors advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level. ...
These N-Channel enhancement mode power field effect
transistors FDP80N06 are produced using Fairchilds proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior ...
