• Product pinout
  • Description
  • TPS1100,Single P-channel Enhancement-Mode MOSFET
  • The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 ...
  • TPS1101,Single P-channel Enhancement-Mode MOSFET
  • The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM
    process. With a maximum VGS(th) of -1.5 V ...
  • TPS1120,Dual P-channel Enhancemenent-Mode MOSFET
  • The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an ...
  • NTB25P06,Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
  • This Power MOSFET NTB25P06 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well ...
  • NTB45N06,Power MOSFET 45 Amps, 60 Volts
  • Power MOSFET NTB45N06 45 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
    ...
  • NTB85N03,Power MOSFET 85 Amps, 28 Volts
  • Power MOSFET NTB85N03 85 Amps, 28 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
    ...
  • NTD20N03L27,Power MOSFET 20 Amps, 30 Volts
  • Power MOSFET NTD20N03L27 20 Amps, 30 Volts,This logic level vertical power MOSFET is a general purpose part that provides the \"best of design\" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The ...
  • NTD80N02,Power MOSFET 24 V, 80 A, N-Channel DPAK
  • Power MOSFET NTD80N02 24 V, 80 A, N-Channel DPAK,N Channel DPAKDesigned for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
    ...
  • NTD2955,Power MOSFET -60 V, -12 A, P-Channel DPAK
  • This Power MOSFET NTD2955 is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well ...
  • NTD3055-094,Power MOSFET 12 Amps, 60 Volts
  • Power MOSFET NTD3055-094 12 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
    ...
  • NTP27N06,Power MOSFET 27 Amps, 60 Volts
  • Power MOSFET NTP27N06 27 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
    ...
  • NTP75N06,Power MOSFET 75 Amps, 60 Volts
  • Power MOSFET NTP75N06 75 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
    ...
  • FDFS6N303,30V N-Channel MOSFET With Schottky Diode
  • The FDFS6N303 incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to ...
  • FDFS2P102,Integrated P-Channel MOSFET And Schottky Diode
  • Fairchild Semiconductor\'s FDFS2P102 combines the exceptional performance of Fairchild\'s high cell density MOSFET with a very low forward drop voltage Schottky barier rectifier in an SO-8 package. this device is designed specifically as a single package ...
  • FDD8424H,40V Dual N & P-Channel PowerTrench MOSFET
  • These dual N and P-Channel enhancement mode Power MOSFETs FDD8424H are produced using Fairchild Semiconductors advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching ...
  • FDC638APZ,-20V P-Channel 2.5V PowerTrench Specified MOSFET
  • This P-Channel 2.5V specified MOSFET FDC638APZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ...
  • FDMS9620S,30V Dual N-Channel PowerTrench MOSFET
  • This device FDMS9620S includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss \"High Side\" MOSFET ...
  • FDMA1023PZ,-20V Dual P-Channel PowerTrench MOSFET
  • This device FDMA1023PZ is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum ...
  • FDB8447L,40V N-Channel PowerTrench MOSFET
  • This NChannel MOSFET FDB8447L has been produced using Fairchild Semiconductor\'s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
    ...
  • FDMA530PZ,-30V P-Channel PowerTrench MOSFET
  • This device FDMA530PZ is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low onstate resistance.
    The MicroFET 2X2 package offers exceptional thermal ...
  • FDMS8692,30V N-Channel PowerTrench MOSFET
  • 30V N-Channel PowerTrench MOSFET FDMS8692 ,The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r while maintaining excellent ...
  • FDB14N30,300V N-Channel MOSFET
  • These NChannel enhancement mode power field effect transistors FDB14N30 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
  • FDG8842CZ,Q1:30V/Q2: -25V Complementary PowerTrench MOSFET
  • Q1:30V/Q2: -25V Complementary PowerTrench MOSFET FDG8842CZ ,These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially ...
  • FDMS9600S,30V PowerTrench MOSFET
  • This device includes two specialized MOSFETs FDMS9600S in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss \"High Side\" MOSFET is ...
  • FDPF20N50FT,500V N-Channel MOSFET, FRFET
  • 500V N-Channel MOSFET FDPF20N50FT , FRFET,These N-Channel enhancement mode power field effect transistors are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advance technology has been especially tailored to ...
  • FDS8813NZ,30V N-Channel PowerTrench MOSFET
  • This NChannel MOSFET FDS8813NZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance.
    This device is well suited for Power Management and load switching applications ...
  • FDZ193P,-20V P-Channel 1.7V PowerTrench WL-CSP MOSFET
  • Designed on Fairchild\'s advanced 1.7V PowerTrench process with state of the art \"low pitch\" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET FDZ193P embodies a breakthrough in packaging technology which ...
  • FDMS8670AS,30V N-Channel PowerTrench SyncFET
  • The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the ...
  • FDMS8680,30V N-Channel PowerTrench MOSFET
  • The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
    ...
  • FDC610PZ,-30V P-Channel PowerTrench MOSFET
  • This PChannel MOSFET FDC610PZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for superior switching performance. These devices are ...
  • FDD4141,-40V P-Channel PowerTrench MOSFET
  • This P-Channel MOSFET FDD4141 has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching ...
  • FDD6N50F,500V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDD6N50F are produced using Failchild\'s proprietary, planar stripe, DMOS technology.
    This advance technology has been especially tailored to minimize on-state resistance, provide ...
  • FDPF13N50FT,500V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDPF13N50FT are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advance technology has been especially tailored to minimize on-state resistance, provide ...
  • FDP12N50,500V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDP12N50 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FQPF10N50CF,500V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FQPF10N50CF are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDPF2710T,250V N-Channel PowerTrench MOSFET
  • This N-Channel MOSFET FDPF2710T is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
    25A, 250V, RDS(on) = 36.3m& ...
  • FDA33N25,250V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDA33N25 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advance technology has been especially tailored to minimize on-state resistance, provide ...
  • HUF75344A3,55V N-Channel UltraFET Power MOSFET
  • This N-channel power MOSFET HUF75344A3 is produced using Fairchild Semiconductors innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device ...
  • FDP7N50,500V N-Channel MOSFET
  • These NChannel enhancement mode power field effect transistors FDP7N50 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
  • FDPF12N50T,500V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDPF12N50T are produced using Fairchild\'s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide ...
  • FDB8453LZ,40V N-Channel PowerTrench MOSFET
  • This N-Channel MOSFET FDB8453LZ is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
    ...
  • FDP80N06,60V N-Channel MOSFET
  • These N-Channel enhancement mode power field effect transistors FDP80N06 are produced using Fairchilds proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide superior ...