High Power LASER DIODES

QL67F6S-A/B/C is a MOCVD grown 670 nm band Gain-Guided type InGaAlP Laser Diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for opto-electronic devices such as Bar Code Reader. By Roithner LaserTechnik GmbH
Part Manufacturer Description Datasheet Samples
CC2545RGZR Texas Instruments 2.4GHz RF Value Line SoC with 32kB flash, 31 GPIO, I2C, SPI and UART 48-VQFN -40 to 85
CC2545RGZ Texas Instruments 2.4GHz RF Value Line SoC with 32kB flash, 31 GPIO, I2C, SPI and UART 48-VQFN -40 to 85
CC2545RGZT Texas Instruments 2.4GHz RF Value Line SoC with 32kB flash, 31 GPIO, I2C, SPI and UART 48-VQFN -40 to 85
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DSPA56371AF160B Freescale Semiconductor A VERSION 56371 160 MHZ
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MPC8272ADSE Freescale Semiconductor DEVELOPMENT SYSTEM FOR A
DSPA56371AF172 Freescale Semiconductor A VERSION 56371 172 MHZ
QL67F6S-A 's PackagesQL67F6S-A 's pdf datasheet
QL67F6SB
QL67F6SA
QL67F6SC
QL67F6S-B
QL67F6S-C

QL67F6S-A pdf datasheet download


QL67F6S-A Pinout, Pinouts
QL67F6S-A pinout,Pin out
This is one package pinout of QL67F6S-A,If you need more pinouts please download QL67F6S-A's pdf datasheet.

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QL67F6S-A Application Notes QL67F6S-A RoHS QL67F6S-A Circuits QL67F6S-A footprint