High Power LASER DIODES

QL67F6S-A/B/C is a MOCVD grown 670 nm band Gain-Guided type InGaAlP Laser Diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for opto-electronic devices such as Bar Code Reader. By Roithner LaserTechnik GmbH
Part Manufacturer Description Datasheet Samples
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PPC5553MVFA132 Freescale Semiconductor MPC5553 MOCCASIN REV. A
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KMPC8248CVRTIEA Freescale Semiconductor PQ27E A W/ TALITOS
MPC8248ZQPIEA Freescale Semiconductor PQ27E A W/ TALITOS
MPC8248ZQTMFA Freescale Semiconductor PQ27E A W/TALITOS
KMPC8248ZQTMFA Freescale Semiconductor PQ27E A W/TALITOS
QL67F6S-A 's PackagesQL67F6S-A 's pdf datasheet
QL67F6SB
QL67F6SA
QL67F6SC
QL67F6S-B
QL67F6S-C

QL67F6S-A pdf datasheet download


QL67F6S-A Pinout, Pinouts
QL67F6S-A pinout,Pin out
This is one package pinout of QL67F6S-A,If you need more pinouts please download QL67F6S-A's pdf datasheet.

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QL67F6S-A Pb-Free QL67F6S-A Cross Reference QL67F6S-A Schematic QL67F6S-A Distributor
QL67F6S-A Application Notes QL67F6S-A RoHS QL67F6S-A Circuits QL67F6S-A footprint