806-825/ 851-870mhz 20w 12.5v, 3 Stage Amp. For Mobile Radio Electric SemiconductorThe RA20H8087M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile Radios that operate in the 806- to 870-MHz
range.
The battery CAN be connected directly to the drain of the
enhancement-mode MOSFET Transistors Without the Gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the Gate voltage increases. With a
Gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical Gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the Gate voltage and controlling the output power with
the input power. By Mitsumi Electronics, Corp.
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RA20H8087M Pb-Free | RA20H8087M Cross Reference | RA20H8087M Schematic | RA20H8087M Distributor |
RA20H8087M Application Notes | RA20H8087M RoHS | RA20H8087M Circuits | RA20H8087M footprint |