135-175mhz 30w 12.5v Mobile Radio Electric SemiconductorThe RA30H1317M is a 30-watt RF MOSFET Amplifier Module
for 12.5-volt mobile Radios that operate in the 135- to 175-MHz
range.
The battery CAN be connected directly to the drain of the
enhancement-mode MOSFET Transistors Without the Gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the Gate voltage increases. With a
Gate voltage around 3.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 4V (typical) and 5V (maximum). At VGG=5V,
the typical Gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the Gate voltage and controlling the output power with
the input power. By Mitsumi Electronics, Corp.
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RA30H1317M Pb-Free | RA30H1317M Cross Reference | RA30H1317M Schematic | RA30H1317M Distributor |
RA30H1317M Application Notes | RA30H1317M RoHS | RA30H1317M Circuits | RA30H1317M footprint |