135-175mhz 30w 12.5v Mobile Radio Electric Semiconductor

The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile Radios that operate in the 135- to 175-MHz range. The battery CAN be connected directly to the drain of the enhancement-mode MOSFET Transistors Without the Gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the Gate voltage increases. With a Gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical Gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the Gate voltage and controlling the output power with the input power. By Mitsumi Electronics, Corp.
RA30H1317M 's PackagesRA30H1317M 's pdf datasheet



RA30H1317M Pinout, Pinouts
RA30H1317M pinout,Pin out
This is one package pinout of RA30H1317M,If you need more pinouts please download RA30H1317M's pdf datasheet.

RA30H1317M circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

RA30H1317M Pb-Free RA30H1317M Cross Reference RA30H1317M Schematic RA30H1317M Distributor
RA30H1317M Application Notes RA30H1317M RoHS RA30H1317M Circuits RA30H1317M footprint