The SD2931 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V dc large signal applications up to 230
MHz. ...
The SD2931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz. ...
The SD2932 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2932 it is
intended for use in 50 V dc large signal
applications up 250 MHz. ...
The SD2933 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V dc large signal applications up 150
MHz. Its special low thermal resistance package
makes it ideal for ISM applications where reliability
and ...
The SD2941-10 is a gold metallized N-Channel
MOS field-effect RF power transistor, intended for
use in 50 V dc large signal applications up to 230
MHz. It is offering 25% lower R than
DS(ON)
industry standard, with 20% higher P than ST ...
The SD2943 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V dc large signal applications up 150
MHz. SD2943 offers a 20% higher power
saturation than SD2933, it is idea for ISM
applications where ...
The SD3931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. It is
intended for use in 100 V DC large signal
applications up to 150 MHz. ...
The SD3932 is a gold metallized N-channel MOS
field-effect RF power transistor. It is intended for
use in 100V DC large signal applications up to
250MHz. ...
The SD3933 is a gold metallized N-channel MOS
field-effect RF power transistor. It is intended for
use in 100V DC large signal applications up to
200MHz. ...
The SD2918 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to
200 MHz ...
The PD57002 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1GHz. The PD57002 is designed for high gain
and broadband ...
The PD57006 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 ...
The PD57018 is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28V in common source mode at
frequencies of up to 1 ...
The PD57030 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies up to 1 ...
The PD57045 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 ...
The PD57060-E is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
MOSFET. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28V in common source mode at
frequencies of up to 1GHz. ...
The PD57070 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to ...
The SD56120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF powe
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0GHz. The SD56120 is designed for high gain
and broadband ...
The SD56120M is a common source N-Channe
enhancement-mode lateral Field-Effect RF pow
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120M is designed for high
gain and broadband ...
The SD57030 is a common source N-channel
enhancement-mode lateral Field-Effect RF powe
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57030 is designed for high gain
and broadband ...
The SD57030-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030-01 is designed for high gain
and broadband ...
The SD57045 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57045 is designed for high gain and
broadband ...
The SD57045-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57045-01 is designed for high gain
and broadband ...
The SD57060 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060 is designed for high gain
and broadband ...
The SD57060-01 is a common source N-channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0GHz. The SD57060-01 is designed for high
gain and broadband ...
The SD57120 is a common source N-channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband ...
MRF281SR1 Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications. ...