• Product pinout
  • Description
  • TRF1123,Power Amplifier Driver
  • The TRF1123 is a highly integrated linear transmitter power amplifier MMIC. The chip has two 16-dB gain steps that provide a total of 32-dB gain control via 1-bit TTL control signals. The chip also integrates a TTL mute function that turns off the amplifiers ...
  • LMV248,Dual Band GSM Power Controller [Obsolete]
  • The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF Power Amplifiers The device operates from a single supply of 2.5V to 5V. ...
  • AD8315,50 DB GSM PA Controller
  • The AD8315 is a complete low cost subsystem for the precise control of RF Power Amplifiers operating in the frequency range 0.1 GHz to 2.5 GHz and over a typical dynamic range of 50 dB. It is intended for use in cellular handsets and other battery-operated ...
  • AD8316,Dual Output GSM PA Controller
  • The AD8316 is a complete, low cost subsystem for the precise control of dual RF Power Amplifiers (PAs) operating in the frequency range 0.1 GHz to 2.5 GHz and over a typical dynamic range of 50 dB. The device is a dual output version of the AD8315 and ...
  • ADL5322,700 MHz To 1000 MHz GaAs Matched RF PA Pre-Driver
  • The ADL5322 is a high linearity GaAs driver amplifier that is internally matched to 50 for operation in the 700 MHz to 1000 MHz frequency range. The amplifier, which has a gain of 20 dB, has been specially designed for use in the output stage of a cellular ...
  • ADL5323,1700 MHz To 2400 MHz GaAs Matched RF PA Pre-Driver
  • The ADL5323 is a high linearity GaAs driver amplifier that is internally matched to 50 for operation in the 1700 MHz to 2400 MHz frequency range. The amplifier, which has a gain of 20 dB, has been specially designed for use in the output stage of a cellular ...
  • ADL5570,2.3 GHz To 2.4 GHz WiMAX Power Amplifier
  • The ADL5570 is a high linearity 2.3 GHz to 2.4 GHz power amplifier designed for WiMAX terminals using TDD operation at a duty cycle of 31%. With a gain of 29 dB and an output compression point of 31 dBm at 2.35 GHz, it can operate at an output power level up ...
  • ISL5239,Pre-Distortion Linearizer
  • The ISL5239 Pre-Distortion Linearizer (PDL) is a full featured component for Power Amplifier (PA) linearization to improve PA power efficiency and reduce PA cost.
    The Radio Frequency (RF) PA is one of the most expensive and power-consuming devices in any ...
  • X9470,RF Power Amplifier (PA) Bias Controller
  • The Intersil X9470 RF PA Bias Controller contains all of the necessary analog components to sense the PA drain current through an external sense resistor and automatically control the gate bias voltage of an LDMOS PA. The external sense resistor voltage is ...
  • BGA6589,BGA6589 MMIC Wideband Medium Power Amplifier
  • BGA6589 MMIC wideband medium power amplifier,Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 4-pin SOT89 plastic low thermal resistance SMD package. The BGA6x89 series of medium ...
  • BGD704,BGD704 750 MHz, 20 DB Gain Power Doubler Amplifier
  • BGD704 750 MHz, 20 dB gain power doubler amplifier,Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BGD712C,BGD712C 750 MHz, 18.5 DB Gain Power Doubler Amplifier
  • BGD712C 750 MHz, 18.5 dB gain power doubler amplifier,Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage of 24 V (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be ...
  • BGE787B,BGE787B 750 MHz, 29 DB Gain Push Pull Amplifier
  • BGE787B 750 MHz, 29 dB gain push pull amplifier,Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC) in a SOT115J package. The module consists of two cascaded stages both in cascode configuration. CAUTION This device is ...
  • BGE788C,BGE788C 750 MHz, 34 DB Gain Push-pull Amplifier
  • BGE788C 750 MHz, 34 dB gain push-pull amplifier,Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC) in a SOT115J package. The module consists of two cascaded stages both in cascode configuration. CAUTION This device is ...
  • ATR7040,ATR7040
  • 5.8 GHz PA with 25 dBm Output Power This 5-GHz power amplifier (PA) is designed using Atmels Silion-Germanium (SiGe) process and provides high efficiency. ...
  • ATR7032,ATR7032
  • This power amplifier (PA) is designed for high-performance 802.11b and 802.11g multi-mode applications such as Mini PCI and PCMCIA for portable devices and access points. The low profile plastic package with internal input matching to 50, and on-chip ...
  • DS1870,DS1870 LDMOS RF Power-Amplifier Bias Controller
  • The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables (LUTs) to control 256-position potentiometers based on the amplifier\'s temperature and drain voltage or current (or ...
  • MAX2247,MAX2247 2.4GHz SiGe Linear Power Amplifier
  • The MAX2247 low-voltage, three-stage linear power amplifier (PA) is optimized for 802.11b/g wireless LAN (WLAN) applications in the 2.4GHz ISM band. The device is integrated with an adjustable bias control, power detector, and shutdown mode. The MAX2247 ...
  • HMC283,Medium Power Amplifier Chip, 17 - 40 GHz
  • The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small size. The chip utilizes a GaAs PHEMT process offering 21 ...
  • HMC283LM1,Medium Power Amplifier SMT, 17 - 40 GHz
  • The HMC283LM1 is a Medium Power Amplifier (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/ O match preserving MMIC chip performance. Utilizing ...
  • HMC326MS8G,InGaP HBT Driver Amplifier SMT, 3.0 - 4.5 GHz
  • The HMC326MS8G(HMC326MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
  • HMC327MS8G,MMIC Power Amplifier SMT, 3 - 4 GHz
  • The HMC327MS8G(HMC327MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
  • HMC383,Medium Power Amplifier Chip, 12 - 30 GHz
  • The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifier which operates between 12 and 30 GHz. The amplifier provides 16 dB of gain and +18 dBm of saturated power from a +5V supply. Consistent gain and output power across the operating band ...
  • HMC383LC4,Medium Power Amplifier SMT, 12 - 30 GHz
  • The HMC383LC4 is a general purpose GaAs PHEMT MMIC Driver Amplifier housed in a leadless RoHS compliant SMT package. The amplifier provides 15 dB of gain and +18 dBm of saturated power from a single +5V supply. Consistent gain and output power across the ...
  • HMC406MS8G,InGaP HBT Power Amplifier SMT, 5 - 6 GHz
  • The HMC406MS8G(HMC406MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
  • HMC407MS8G,InGaP HBT Power Amplifier SMT, 5 - 7 GHz
  • The HMC407MS8G(HMC407MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at ...
  • HMC408LP3,1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz
  • The HMC408LP3(HMC408LP3E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply ...
  • HMC409LP4,1 Watt Power Amplifier SMT, 3.3 - 3.8 GHz
  • The HMC409LP4(HMC409LP4E) is a high efficiency GaAs InGaP HBT MMIC Power amplifier operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and ...
  • HMC413QS16G,Power Amplifier SMT, 1.6 - 2.2 GHz
  • The HMC413QS16G(HMC413QS16GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for ...
  • HMC414MS8G,InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz
  • The HMC414MS8G(HMC414MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
  • HMC415LP3,InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz
  • The HMC415LP3(HMC415LP3E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for ...
  • HMC441,Medium Power Amplifier Chip, 6 - 18 GHz
  • The HMC441 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 6 and 18 GHz*. The amplifier provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5V supply voltage. An optional gate bias is provided to allow ...
  • HMC441LC3B,Medium Power Amplifier SMT, 6 - 18 GHz
  • The HMC441LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 6 and 18 GHz, the amplifier provides 14 dB of gain, +21.5 dBm of saturated power and 27% PAE from a +5V supply. This ...
  • HMC441LH5,Medium Power Amplifier SMT, 7.0 - 15.5 GHz
  • The HMC441LH5 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier housed in a hermetic SMT leadless package. The amplifier provides 15 dB of gain and 21.5 dBm of saturated power at 25% PAE from a +5V supply. This 50 Ohm matched amplifier ...
  • HMC441LM1,Medium Power Amplifier SMT, 7.0 - 15.5 GHz
  • The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5V supply voltage. An optional gate bias is ...
  • HMC441LP3,Medium Power Amplifier SMT, 6.5 - 13.5 GHz
  • The HMC441LP3(HMC441LP3E) is a broadband GaAs PHEMT MMIC Medium Power Amplifier which operates between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifier provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5V supply ...
  • HMC442,Medium Power Amplifier Chip, 17.5 - 25.5 GHz
  • The HMC442 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 17.5 and 25.5 GHz. The HMC442 provides 15 dB of gain, +23 dBm of saturated power and 25% PAE from a +5V supply voltage. The amplifier chip can easily be integrated ...
  • HMC442LC3B,Medium Power Amplifier SMT, 17.5 - 25.5 GHz
  • The HMC442LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless Pb free RoHS compliant SMT package. Operating between 17.5 and 25.5 GHz, the amplifier provides 13 dB of gain, +23 dBm of saturated power and 26% PAE from a +5V supply ...
  • HMC442LM1,Medium Power Amplifier SMT, 17.5 - 24.0 GHz
  • The HMC442LM1 is a broadband 17.5 to 24 GHz GaAs PHEMT MMIC Medium Power Amplifier in a SMT leadless chip carrier package. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip ...
  • HMC450QS16G,Power Amplifier SMT, 0.8 - 1.0 GHz
  • The HMC450QS16G(HMC450QS16GE) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the ...
  • HMC451,Medium Power Amplifier Chip, 5 - 20 GHz
  • The HMC451 is a general purpose GaAs PHEMT MMIC Medium Power Amplifier which operates between 5 and 20 GHz. The amplifier provides 22 dB of gain, +22 dBm of saturated power and 24% PAE from a +5V supply. Consistent gain and output power across the ...
  • HMC451LC3,Medium Power Amplifier SMT, 5 - 20 GHz
  • The HMC451LC3 is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 20 GHz, the amplifier provides 19 dB of gain, +21 dBm of saturated power and 21% PAE from a single +5.0V supply. ...
  • HMC452QS16G,1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz
  • The HMC452QS16G(HMC452QS16GE) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically ...
  • HMC452ST89,1 Watt Power Amplifier SMT, 04 - 2.2 GHz
  • The HMC452ST89(HMC452ST89E) is a high dynamic range GaAs InGaP HBT 1 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the ...
  • HMC453QS16G,1.6 Watt Power Amplifier SMT, 0.4 - 2.2 GHz
  • The HMC453QS16G(HMC453QS16GE) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically ...
  • HMC453ST89,1.6 Watt Power Amplifier SMT, 0.4 - 2.2 GHz
  • The HMC453ST89(HMC453ST89E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the ...
  • HMC457QS16G,1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz
  • The HMC457QS16G(HMC457QS16GE) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 ...
  • HMC459,Wideband Power Amplifier Chip, DC - 18 GHz
  • The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V ...
  • HMC464,Wideband Power Amplifier Chip, 2- 20 GHz
  • The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. ...
  • HMC464LP5,Wideband Power Amplifier SMT, 2 - 20 GHz
  • The HMC464LP5(HMC464LP5E) is a GaAs MMIC PHEMT Distributed Power Amplifier in leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain ...
  • HMC465,Wideband Driver Amplifier Chip, DC - 20 GHz
  • The HMC465 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 2.5 dB noise figure and +24 dBm of saturated output power while requiring only 160 mA from a +8V supply. Gain ...
  • HMC465LP5,Wideband Driver Amplifier SMT, DC - 20 GHz
  • The HMC465LP5(HMC465LP5E) is a GaAs MMIC PHEMT Distributed Driver Amplifier packaged in leadless 5x5 mm surface mount package which operates between DC and 20 GHz. The amplifier provides 15 dB of gain, 3 dB noise figure and +25 dBm of saturated output ...
  • HMC486,2 Watt Power Amplifier Chip, 7 - 9 GHz
  • The HMC486 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 7 to 9 GHz. This amplifier die provides 26 dB of gain, +34 dBm of saturated power and 24% PAE from a +7V supply voltage. Output IP3 is +40 dBm typical. The RF ...
  • HMC486LP5,2 Watt Power Amplifier SMT, 7 - 9 GHz
  • The HMC486LP5(HMC486LP5E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier housed in leadless 5x5 mm surface mount packages. Operating from 7 to 9 GHz, the amplifier provides 22 dB of gain, +33 dBm of saturated power and 20% PAE from a +7V ...
  • HMC487LP5,2 Watt Power Amplifier SMT, 9 - 12 GHz
  • The HMC487LP5(HMC487LP5E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier housed in leadless 5x5 mm surface mount packages. Operating from 9 to 12 GHz, the amplifier provides 20 dB of gain, +33 dBm of saturated power and 20% PAE from a ...
  • HMC489LP5,1 Watt Power Amplifier SMT, 12 - 16 GHz
  • The HMC489LP5(HMC489LP5E) is a high dynamic range GaAs PHEMT MMIC Power Amplifier housed in leadless 5x5 mm surface mount packages. Operating from 12 to 16 GHz, the amplifier provides 13 dB of gain, +32 dBm of saturated power and 16% PAE from a +7V supply ...
  • HMC498,Medium Power Amplifier Chip, 17 - 24 GHz
  • The HMC498 is a high dynamic range GaAs PHEMT MMIC Power Amplifier which operates between 17 and 24 GHz. The HMC498 provides 24 dB of gain, +27 dBm of saturated power and 25% PAE from a +5V supply voltage. The HMC498 amplifier can easily be integrated into ...