The TRF1123 is a highly integrated linear transmitter power amplifier MMIC. The chip has two 16-dB gain steps that provide a total of 32-dB gain control via 1-bit TTL control signals. The chip also integrates a TTL mute function that turns off the amplifiers ...
The LM3200 is a DC-DC converter optimized for powering RF Power Amplifiers (PAs) from a single Lithium-Ion cell. It steps down an input voltage of 2.7V to 5.5V to a variable output voltage of 0.8V to 3.6V. The output voltage is set using an analog input ( ...
The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF Power Amplifiers The device operates from a single supply of 2.5V to 5V. ...
The AD8315 is a complete low cost subsystem for the precise control of RF Power Amplifiers operating in the frequency range 0.1 GHz to 2.5 GHz and over a typical dynamic range of 50 dB. It is intended for use in cellular handsets and other battery-operated ...
The AD8316 is a complete, low cost subsystem for the precise control of dual RF Power Amplifiers (PAs) operating in the frequency range 0.1 GHz to 2.5 GHz and over a typical dynamic range of 50 dB. The device is a dual output version of the AD8315 and ...
The ADL5322 is a high linearity GaAs driver amplifier that is internally matched to 50 for operation in the 700 MHz to 1000 MHz frequency range. The amplifier, which has a gain of 20 dB, has been specially designed for use in the output stage of a cellular ...
The ADL5323 is a high linearity GaAs driver amplifier that is internally matched to 50 for operation in the 1700 MHz to 2400 MHz frequency range. The amplifier, which has a gain of 20 dB, has been specially designed for use in the output stage of a cellular ...
The ADL5570 is a high linearity 2.3 GHz to 2.4 GHz power amplifier designed for WiMAX terminals using TDD operation at a duty cycle of 31%. With a gain of 29 dB and an output compression point of 31 dBm at 2.35 GHz, it can operate at an output power level up ...
The ISL5239 Pre-Distortion Linearizer (PDL) is a full featured component for Power Amplifier (PA) linearization to improve PA power efficiency and reduce PA cost. The Radio Frequency (RF) PA is one of the most expensive and power-consuming devices in any ...
The Intersil X9470 RF PA Bias Controller contains all of the necessary analog components to sense the PA drain current through an external sense resistor and automatically control the gate bias voltage of an LDMOS PA. The external sense resistor voltage is ...
BGA6589 MMIC wideband medium power amplifier,Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband medium power amplifier with internal matching
circuit in a 4-pin SOT89 plastic low thermal resistance
SMD package.
The BGA6x89 series of medium ...
BGD502 550 MHz, 18.5 dB gain power doubler amplifier,Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
...
BGD704 750 MHz, 20 dB gain power doubler amplifier,Hybrid amplifier module in a SOT115J package operating with a voltage supply of
24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport ...
BGD712C 750 MHz, 18.5 dB gain power doubler amplifier,Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be ...
BGD885 860 MHz, 17 dB gain power doubler amplifier,Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
...
BGE787B 750 MHz, 29 dB gain push pull amplifier,Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC) in
a SOT115J package. The module consists of two cascaded stages both in cascode
configuration.
CAUTION
This device is ...
BGE788C 750 MHz, 34 dB gain push-pull amplifier,Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC) in
a SOT115J package. The module consists of two cascaded stages both in cascode
configuration.
CAUTION
This device is ...
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescales High Voltage (28 Volts) LDMOS I
technology and integrates a two-stage structure. Its wideband on-chip
matching design makes it usable from 1500 to ...
The MHVIC2114NR2 wideband integrated circuit is designed for base station
applications. It uses Freescales newest High Voltage (26 to 28 Volts) LDMO
IC technology and integrates a multi -stage structure. Its wideband On-Chip
matching design makes it usable ...
The MHVIC910HNR2 integrated circuit is designed for GSM base stations,
uses Freescales newest High Voltage (26 Volts) LDMOS IC technology, an
contains a three-stage amplifier. Target applications include macrocell (driver
function) and microcell base ...
MHVIC915NR2: 746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE , RF LDMOS Wideband Integrated Power Amplifier MHVIC915NR2 The MHVIC915NR2 wideband integrated circuit is designed with on-chi
matching that makes it usable from 750 to 1000 MHz. This multi ...
MW4IC001NR4: 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale
newest ...
MW4IC2020N: 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers MW4IC2020N The MW4IC2020N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1600 to 2400 MHz. This multi ...
MW4IC2230N: 2110-2170 MHz, 30 W, 28 V, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers MW4IC2230N The MW4IC2230N wideband integrated circuit is designed for W-CDMA
base station applications. It uses Freescales newest High Voltage (26 to ...
MW4IC915N: 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers MW4IC915N The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescales newest Hig
Voltage ...
MW5IC2030N: 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiers MW5IC2030N The MW5IC2030N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1930 to 1990 MHz. This multi ...
MW6IC1940N: 1920-2000 MHz, 40 W, 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers MW6IC1940N The MW6IC1940NBR1
MW6IC1940GNBR1 wideband integrated circuit is designed with
on-chip matching that makes it usable from 1920 to 2000 MHz. This
multi ...
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescales newest High Voltage (26 to 32 Volts) LDMO
IC technology and integrates a multi -stage structure. Its wideband on-chip
design makes it usable from 1805 ...
MW6IC2240N: 2110-2170 MHz, 4.5 W Avg., 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers MW6IC2240N The MW6IC2240N wideband integrated circuit is designed with on-chip
matching that makes it usable from 2110 to 2170 MHz. This multi ...
The MW7IC18100N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1805 to 2050 MHz. This multi -stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations including GSM ...
MW7IC2240N: 2110-2170 MHz, 4 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers MW7IC2240N The MW7IC2240N wideband integrated circuit is designed with on-chip
matching that makes it usable from 2000 to 2200 MHz. This multi ...
MWE6IC9100N: 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers MWE6IC9100N The MWE6IC9100N wideband integrated circuit is designed with on-chip
matching that makes it usable from 869 to 960 MHz. This multi -stage
structure is ...
MWIC930N: 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers MWIC930N The MWIC930N wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescales newest High Voltage (26 ...
The 5-GHz power amplifier is designed using AtmelsSilicon-Germanium (SiGe) pro-
cess and provides excellent noise performance as well as good power-added
efficiency. ...
5.8 GHz PA with 25 dBm Output Power This 5-GHz power amplifier (PA) is designed using Atmels Silion-Germanium (SiGe)
process and provides high efficiency. ...
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50, and
on-chip ...
The DS1870 is a dual-channel bias controller targeted
toward class AB LDMOS RF power-amplifier applications.
It uses lookup tables (LUTs) to control 256-position
potentiometers based on the amplifier\'s
temperature and drain voltage or current (or ...
The MAX2059 high-linearity digital-variable-gain amplifier (DVGA) is designed to provide 56dB of total gain range and typical output IP3 and output P1dB levels of +31.8dBm
and +18.4dBm, respectively. The device is ideal for a variety of applications, ...
The MAX2058 high-linearity digital-variable-gain amplifier (DVGA) is designed to provide 62dB of total gain range and typical output IP3 and output P1dB levels of +32.3dBm and +19dBm, respectively. The device is ideal for a variety of applications, including ...
The MAX2430 is a versatile, silicon RF power amplifier that
operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at ...
The MAX2232/MAX2233 low-voltage, silicon RF Power Amplifiers (PAs) are designed for use in the 900MHz ISM band. They operate from a single +2.7V to +5.5V supply, allowing them to be powered directly from a 3-cell NiCd or a 1-cell Lithium-Ion battery. The ...
The MAX2232/MAX2233 low-voltage, silicon RF Power Amplifiers (PAs) are designed for use in the 900MHz ISM band. They operate from a single +2.7V to +5.5V supply, allowing them to be powered directly from a 3-cell NiCd or a 1-cell Lithium-Ion battery. The ...
The MAX2240 single-supply, low-voltage power amplifier (PA) IC is designed specifically for applications in the 2.4GHz to 2.5GHz frequency band. The PA is compliant with Bluetooth, HomeRF, and 802.11 standards, as well as other FSK modulation systems. The PA ...
The MAX2383 upconverter and PA driver IC
is designed for emerging ARIB (Japan) and
ETSI-UMTS (Europe) W-CDMA applications. The IC includes an upconversion mixer with variable gain control, an LO buffer, and a variable-gain PA driver for output power ...
The MAX2244/MAX2245/MAX2246 single-supply, low-voltage power amplifiers (PAs) are designed for 20dBm Bluetooth Class 1 applications in the 2.4GHz to 2.5GHz band. The MAX2244/MAX2245 deliver a peak output power of 22dBm with greater than 20dB output-power ...
The MAX2244/MAX2245/MAX2246 single-supply, low-voltage power amplifiers (PAs) are designed for 20dBm Bluetooth Class 1 applications in the 2.4GHz to 2.5GHz band. The MAX2244/MAX2245 deliver a peak output power of 22dBm with greater than 20dB output-power ...
The MAX2244/MAX2245/MAX2246 single-supply, low-voltage power amplifiers (PAs) are designed for 20dBm Bluetooth Class 1 applications in the 2.4GHz to 2.5GHz band. The MAX2244/MAX2245 deliver a peak output power of 22dBm with greater than 20dB output-power ...
The MAX2247 low-voltage, three-stage linear power amplifier (PA) is optimized for 802.11b/g wireless LAN (WLAN) applications in the 2.4GHz ISM band. The device is integrated with an adjustable bias control, power detector, and shutdown mode. The MAX2247 ...
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small size. The chip utilizes a GaAs PHEMT process offering 21 ...
The HMC283LM1 is a Medium Power Amplifier (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/ O match preserving MMIC chip performance. Utilizing ...
The HMC326MS8G(HMC326MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
The HMC327MS8G(HMC327MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifier which operates between 12 and 30 GHz. The amplifier provides 16 dB of gain and +18 dBm of saturated power from a +5V supply. Consistent gain and output power across the operating band ...
The HMC383LC4 is a general purpose GaAs PHEMT MMIC Driver Amplifier housed in a leadless RoHS compliant SMT package. The amplifier provides 15 dB of gain and +18 dBm of saturated power from a single +5V supply. Consistent gain and output power across the ...
The HMC406MS8G(HMC406MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
The HMC407MS8G(HMC407MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at ...
The HMC408LP3(HMC408LP3E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply ...
The HMC409LP4(HMC409LP4E) is a high efficiency GaAs InGaP HBT MMIC Power amplifier operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and ...
The HMC413QS16G(HMC413QS16GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for ...
The HMC414MS8G(HMC414MS8GE) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for ...
The HMC415LP3(HMC415LP3E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for ...
The HMC441 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 6 and 18 GHz*. The amplifier provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5V supply voltage. An optional gate bias is provided to allow ...
The HMC441LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 6 and 18 GHz, the amplifier provides 14 dB of gain, +21.5 dBm of saturated power and 27% PAE from a +5V supply. This ...
The HMC441LH5 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier housed in a hermetic SMT leadless package. The amplifier provides 15 dB of gain and 21.5 dBm of saturated power at 25% PAE from a +5V supply. This 50 Ohm matched amplifier ...
The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5V supply voltage. An optional gate bias is ...
The HMC441LP3(HMC441LP3E) is a broadband GaAs PHEMT MMIC Medium Power Amplifier which operates between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifier provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5V supply ...
The HMC442 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 17.5 and 25.5 GHz. The HMC442 provides 15 dB of gain, +23 dBm of saturated power and 25% PAE from a +5V supply voltage. The amplifier chip can easily be integrated ...
The HMC442LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless Pb free RoHS compliant SMT package. Operating between 17.5 and 25.5 GHz, the amplifier provides 13 dB of gain, +23 dBm of saturated power and 26% PAE from a +5V supply ...
The HMC442LM1 is a broadband 17.5 to 24 GHz GaAs PHEMT MMIC Medium Power Amplifier in a SMT leadless chip carrier package. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip ...
The HMC450QS16G(HMC450QS16GE) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the ...
The HMC451 is a general purpose GaAs PHEMT MMIC Medium Power Amplifier which operates between 5 and 20 GHz. The amplifier provides 22 dB of gain, +22 dBm of saturated power and 24% PAE from a +5V supply. Consistent gain and output power across the ...
The HMC451LC3 is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 20 GHz, the amplifier provides 19 dB of gain, +21 dBm of saturated power and 21% PAE from a single +5.0V supply. ...
The HMC452QS16G(HMC452QS16GE) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically ...
The HMC452ST89(HMC452ST89E) is a high dynamic range GaAs InGaP HBT 1 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the ...
The HMC453QS16G(HMC453QS16GE) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically ...
The HMC453ST89(HMC453ST89E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the ...
The HMC457QS16G(HMC457QS16GE) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 ...
The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V ...
The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. ...
The HMC464LP5(HMC464LP5E) is a GaAs MMIC PHEMT Distributed Power Amplifier in leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain ...
The HMC465 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 2.5 dB noise figure and +24 dBm of saturated output power while requiring only 160 mA from a +8V supply. Gain ...
The HMC465LP5(HMC465LP5E) is a GaAs MMIC PHEMT Distributed Driver Amplifier packaged in leadless 5x5 mm surface mount package which operates between DC and 20 GHz. The amplifier provides 15 dB of gain, 3 dB noise figure and +25 dBm of saturated output ...
The HMC486 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 7 to 9 GHz. This amplifier die provides 26 dB of gain, +34 dBm of saturated power and 24% PAE from a +7V supply voltage. Output IP3 is +40 dBm typical. The RF ...
The HMC486LP5(HMC486LP5E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier housed in leadless 5x5 mm surface mount packages. Operating from 7 to 9 GHz, the amplifier provides 22 dB of gain, +33 dBm of saturated power and 20% PAE from a +7V ...
The HMC487LP5(HMC487LP5E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier housed in leadless 5x5 mm surface mount packages. Operating from 9 to 12 GHz, the amplifier provides 20 dB of gain, +33 dBm of saturated power and 20% PAE from a ...
The HMC489LP5(HMC489LP5E) is a high dynamic range GaAs PHEMT MMIC Power Amplifier housed in leadless 5x5 mm surface mount packages. Operating from 12 to 16 GHz, the amplifier provides 13 dB of gain, +32 dBm of saturated power and 16% PAE from a +7V supply ...
The HMC498 is a high dynamic range GaAs PHEMT MMIC Power Amplifier which operates between 17 and 24 GHz. The HMC498 provides 24 dB of gain, +27 dBm of saturated power and 25% PAE from a +5V supply voltage. The HMC498 amplifier can easily be integrated into ...
