The LMV232 dual RF detector is designed for RF transmit
power measurement in mobile phones. This dual mean
square IC is especially suited for accurate power measure-
ment of RF signals exhibiting high peak-to-average ratios
used in 3G and UMTS/CDMA ...
The device LMV243 is intended for use within an RF transmit power control loop in GSM mobile phones and supports GaAs HBT and bipolar RF single supply power amplifiers. The circuit operates with a single supply from 2.7V to 3.3V. The LMV243 contains an ...
BLF145 HF power MOS transistor,
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123A flange
package, with a ceramic cap. ...
BLF147 VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(VGS) ...
BLF177 HF/VHF power MOS transistor,
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage ...
The FPD1000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics. ...
The FPD1050SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 m x 150 m Schottk barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and ...
The FPD1050SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 m x 150 m Schottk barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and ...
The FPD1500SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 m x 1500 m Schottky barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed ...
The FPD2000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics. ...
The FPD200P70 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 mm x 200 mm Schottky barrier
Gate, defined by high-resolution stepperbased
photolithography. ...
The FPD2250SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 m x 250 m Schottk barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed ...
The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The double recessed Gate ...
The FPD6836P70 is a low parasitic, surface
mountable packaged depletion mode
pseudomorphic High Electron Mobility
Transistor (pHEMT) optimised for low noise,
high frequency applications. ...
The FPD750DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 m 750 mSchottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and ...
The FPD750SOT343 is a packaged depletion
mode pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 x 750
m Shottky barrier Gate. The Filtronic
0.25m rocess ensures class-leading noise
performance. The use of a small ...
The FPD750SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 m 750 mSchottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed ...
The FPM2750QFN is a packaged pair of
pseudomorphic High Electron Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25m rocess ensures class-leading noise
performance. The use of a small ...
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuints proven
standard 0.35um power pHEMT
production process. ...
The TriQuint TGF2021-02 is a discrete
2 mm pHEMT which operates from DC-
12 GHz. The TGF2021-02 is designed
using TriQuintsproven standard
0.35um power pHEMT production
process.
The TGF2021-02 typically provides
> 33 dBm of saturated output power ...
The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuints proven sandard 0.35um power
pHEMT production process. ...
The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuints proven sandard 0.35um power
pHEMT production process. ...
The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuints proven sandard 0.35um power
pHEMT production process. ...
The TriQuint TGF2022-06 is a discrete
0.6 mm pHEMT which operates from
DC-20 GHz. The TGF2022-06 is
designed using TriQuints proven
standard 0.35um power pHEMT
production process.
The TGF2022-06 typically provides
> 28 dBm of saturated output ...
The TriQuint TGF2022-12 is a discrete
1.2 mm pHEMT which operates from
DC-20 GHz. The TGF2022-12 is
designed using TriQuints proven
standard 0.35um power pHEMT
production process.
The TGF2022-12 typically provides
> 31 dBm of saturated output ...
The TriQuint TGF2022-24 is a discrete
2.4 mm pHEMT which operates from
DC-20 GHz. The TGF2022-24 is
designed using TriQuints proven
standard 0.35um power pHEMT
production process.
The TGF2022-24 typically provides
> 34 dBm of saturated output ...
The TriQuint TGF2022-48 is a discrete
4.8 mm pHEMT which operates from
DC-20 GHz. The TGF2022-48 is
designed using TriQuints proven
standard 0.35um power pHEMT
production process.
The TGF2022-48 typically provides
> 37 dBm of saturated output ...
The TGF2960-SD is a high performance 1/2-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The devices ideal operating point is at a drain bas
of 8 V and 100 mA. At this bias at 900 MHz when ...
The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The devices ideal operating point is at a drain bas
of 8 V and 200 mA. At this bias at 900 MHz when ...
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in
Class A and Class AB operation. ...
The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12
GHz in Class A and Class AB operation.
Typical performance at 8.5 GHz is 31.5 dBm power ...
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34
dBm power ...
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation.
Typical performance at 6 GHz is 37dBm power ...
The PRA1000 is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor (LDMOS)
RF Power transistor suitable for pulsed applications.
The PRA1000 is a versitle device well suited for long &
short pulsed applications including; DME, ...
The PD25025F is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for
2.3GHz - 2.5GHz Class AB wireless base station
amplifier applications.
This device is manufactured on an advanced ...
The PD27025F is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for
2.5GHz - 2.7GHz Class AB wireless base station
amplifier applications.
This device is manufactured on an advanced ...
The AGR18030EF is a high-voltage, gold-metallized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power field effect transistor (FET) suit-
able for global system for mobile communication
(GSM), enhanced data for global evolution (EDGE),
and ...
The AGR19030EF is a 30 W, 28 V N-channel later- ally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for per- sonal communication service (PCS) (1930 MHz,990 MHz), global system for mobile communication (GSM/EDGE), ...
The AGR21030EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code division multiple access (W-CDMA), single and
multicarrier class AB wireless base station power
amplifier ...
The AGR09030E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for ...
The AGR18045E is a high-voltage, gold-metallized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power field effect transistor (FET) suit-
able for global system for mobile communication
(GSM), enhanced data for global evolution (EDGE),
and ...
The AGR19045EF is a 45 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz,
1990 MHz), global system for mobile ...
The AGR21045EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code division multiple access (W-CDMA), single and
multicarrier class AB wireless base station power
amplifier ...
The AGR26045EF is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications,
including multichannel multipoint distribution ...
The AGR09045E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data ...
The AGR18060E is a 60 W, 26 V N-channel laterally
diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
enhanced data for global evolution (EDGE), global
system for mobile communication (GSM), and single-
carrier ...
The AGR18060E is a 60 W, 26 V N-channel laterally
diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
enhanced data for global evolution (EDGE), global
system for mobile communication (GSM), and single-
carrier ...
The AGR21060E is a high-voltage, gold-metalized,
enhancement-mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for wideband code division multiple access
(W-CDMA), single and multicarrier class AB wireless
base ...
The AGR09070EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class ...
The AGR09085E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global ...
The AGR18090E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB ...
90 W, 1930 MHz1990 MHz, PCS LDMOS RF Power Transistor,The AGR19090E is a 90 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz,
1990 ...
The AGR09090EF is a high-voltage, gold-metalized, lat-
erally diffused metal oxide semiconductor (LDMOS) RF
power transistor suitable for global system for mobile com-
munication (GSM), enhanced data for global evolution
(EDGE), cellular, and multicarrier ...
The AGR18125E is a 125 W, 26 V, N-channel gold-
metallized, laterally diffused metal oxide semicon-
ductor (LDMOS) RF power field effect transistor
(FET) suitable for global system for mobile communi-
cation (GSM), enhanced data for global ...
The AGR19125E is a 125 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS)
(1930 MHz1990 MHz), time-division multipl
access (TDMA), and ...
The AGR21125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for wideband code division multiple access
(W-CDMA), single and multicarrier class AB wireless
base ...
The AGR26125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications
including multichannel multipoint distribution service
(MMDS) ...
The AGR09130E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global ...
The AGR19180EF is a 180 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz,
1990 MHz), code division multiple access (CDMA),
global ...
The AGR21180EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code division multiple access (W-CDMA), single and
multicarrier class AB wireless base station power
amplifier ...
The AGR09180EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for ...
The SPF-2086T is a high performance 0.1-12.0 GHz Low Noise pHEMT GaAs FET with Schottky barrier gates. This device is ideally biased at 3V/20mA for lowest noise performance and battery powered requirements. When biased at 5V/40mA, it delivers excellent output ...
The SPF-2086TK is a high performance 0.1-6.0 GHz Low Noise pHEMT GaAs FET with Schottky barrier gates. This device is ideally biased at 3V/20mA for lowest noise performance and battery powered requirements. When biased at 5V/40mA, it delivers excellent output ...
Sirenza Microdevices SPF-3043 is a high performanc
0.25 pHEMT Gallium Arsenide FET. This 300 device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device can
deliver OIP3 of 32dBm. It provides ...
NEC\'S NE4210S01 is a pseudomorphic Hetero-Junction FET
that uses the junction between Si-doped AIGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and ...
RF POWER TRANSISTOR VDMOS , Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others. ...
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process ...
Silicon VDMOS and LDMOS
transistors SK202 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
\"Polyfet\" process ...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SK204 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
Silicon VDMOS and LDMOS
transistors SP201 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
\"Polyfet\" process ...
RF POWER VDMOS TRANSISTOR SP202 ,Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SP203 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SP204 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SQ201 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SQ202 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SA701 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SA702 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SC701 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SD702 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SD703 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SH702 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SH703 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SK701 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
Silicon VDMOS and LDMOS
transistors SK702 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
\"Polyfet\" process ...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SM401 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SM703 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SM704 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SM705 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SM706 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS
transistors SP701 designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
...
