• Product pinout
  • Description
  • BLF145,BLF145 HF Power MOS Transistor
  • BLF145 HF power MOS transistor, Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. ...
  • BLF147,BLF147 VHF Power MOS Transistor
  • BLF147 VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) ...
  • BLF177,BLF177 HF/VHF Power MOS Transistor
  • BLF177 HF/VHF power MOS transistor, Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage ...
  • FPD1000AS,1W Packaged Power PHEMT FPD1000AS
  • The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. ...
  • FPD2000AS,2W Packaged Power PHEMT FPD2000AS
  • The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.
    ...
  • FPD200P70,High Frequency Packaged PHEMT FPD200P70
  • The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 200 mm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
    ...
  • FPD750DFN,Low Noise High Linearity Packaged PHEMT FPD750DFN
  • The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m 750 mSchottky barrier Gate, defined by high-resolution stepper- based photolithography. The recessed and ...
  • TGF2021-01,X-band Discrete Power PHEMT
  • The TriQuint TGF2021-01 is a discrete 1 mm pHEMT which operates from DC-12 GHz. The TGF2021-01 is designed using TriQuints proven standard 0.35um power pHEMT production process. ...
  • TGF2021-02,X-band Discrete Power PHEMT
  • The TriQuint TGF2021-02 is a discrete 2 mm pHEMT which operates from DC- 12 GHz. The TGF2021-02 is designed using TriQuintsproven standard 0.35um power pHEMT production process. The TGF2021-02 typically provides > 33 dBm of saturated output power ...
  • TGF2021-04,X-band Discrete Power PHEMT
  • The TriQuint TGF2021-04 is a discrete 4 mm pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using TriQuints proven sandard 0.35um power pHEMT production process. ...
  • TGF2021-08,X-band Discrete Power PHEMT
  • The TriQuint TGF2021-08 is a discrete 8mm pHEMT which operates from DC-12 GHz. The TGF2021-08 is designed using TriQuints proven sandard 0.35um power pHEMT production process. ...
  • TGF2021-12,X-band Discrete Power PHEMT
  • The TriQuint TGF2021-08 is a discrete 8mm pHEMT which operates from DC-12 GHz. The TGF2021-08 is designed using TriQuints proven sandard 0.35um power pHEMT production process. ...
  • TGF2022-06,Ku-band Discrete Power PHEMT
  • The TriQuint TGF2022-06 is a discrete 0.6 mm pHEMT which operates from DC-20 GHz. The TGF2022-06 is designed using TriQuints proven standard 0.35um power pHEMT production process. The TGF2022-06 typically provides > 28 dBm of saturated output ...
  • TGF2022-12,Ku-band Discrete Power PHEMT
  • The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuints proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides > 31 dBm of saturated output ...
  • TGF2022-24,Ku-band Discrete Power PHEMT
  • The TriQuint TGF2022-24 is a discrete 2.4 mm pHEMT which operates from DC-20 GHz. The TGF2022-24 is designed using TriQuints proven standard 0.35um power pHEMT production process. The TGF2022-24 typically provides > 34 dBm of saturated output ...
  • TGF2022-48,Ku-band Discrete Power PHEMT
  • The TriQuint TGF2022-48 is a discrete 4.8 mm pHEMT which operates from DC-20 GHz. The TGF2022-48 is designed using TriQuints proven standard 0.35um power pHEMT production process. The TGF2022-48 typically provides > 37 dBm of saturated output ...
  • TGF2960-SD,0.5 W DC-5 GHz Packaged HFET
  • The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The devices ideal operating point is at a drain bas of 8 V and 100 mA. At this bias at 900 MHz when ...
  • TGF2961-SD,1 W DC-4GHz Packaged HFET
  • The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The devices ideal operating point is at a drain bas of 8 V and 200 mA. At this bias at 900 MHz when ...
  • TGF4230-SCC,1.2 Mm HFET
  • The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. ...
  • TGF4240-SCC,2.4mm HFET
  • The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power ...
  • TGF4250-SCC,4.8 Mm HFET
  • The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power ...
  • TGF4260-SCC,9.6mm HFET
  • The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power ...
  • AGR18060E,60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
  • The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single- carrier ...
  • SPF-2086T,Low Noise PHEMT GaAs FET 0.1 - 12 GHz Operation
  • The SPF-2086T is a high performance 0.1-12.0 GHz Low Noise pHEMT GaAs FET with Schottky barrier gates. This device is ideally biased at 3V/20mA for lowest noise performance and battery powered requirements. When biased at 5V/40mA, it delivers excellent output ...
  • SPF-2086TK,Low Noise PHEMT GaAs FET 0.1 - 6 GHz Operation
  • The SPF-2086TK is a high performance 0.1-6.0 GHz Low Noise pHEMT GaAs FET with Schottky barrier gates. This device is ideally biased at 3V/20mA for lowest noise performance and battery powered requirements. When biased at 5V/40mA, it delivers excellent output ...
  • SPF-3043,Low Noise PHEMT GaAs FET
  • Sirenza Microdevices SPF-3043 is a high performanc 0.25 pHEMT Gallium Arsenide FET. This 300 device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can deliver OIP3 of 32dBm. It provides ...
  • UPG2160T5K,NEC\'s SUPER LOW NOISE HJ FET
  • NEC\'S NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and ...
  • S8201,RF POWER TRANSISTOR VDMOS
  • RF POWER TRANSISTOR VDMOS , Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • S8202,RF POWER VDMOS TRANSISTOR
  • Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process ...
  • SK202,RF POWER VDMOS TRANSISTOR
  • Silicon VDMOS and LDMOS transistors SK202 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\" process ...
  • SK204,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SK204 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SP201,RF POWER VDMOS TRANSISTOR
  • Silicon VDMOS and LDMOS transistors SP201 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\" process ...
  • SP202,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR SP202 ,Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SP203,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SP203 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SP204,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SP204 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SQ201,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SQ201 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SQ202,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SQ202 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SA701,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SA701 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SA702,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SA702 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SC701,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SC701 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SD702,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SD702 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SD703,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SD703 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SH702,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SH702 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SH703,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SH703 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SK701,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SK701 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SK702,RF POWER VDMOS TRANSISTOR
  • Silicon VDMOS and LDMOS transistors SK702 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\" process ...
  • SM401,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SM401 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SM703,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SM703 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SM704,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SM704 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SM705,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SM705 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SM706,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SM706 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...
  • SP701,RF POWER VDMOS TRANSISTOR
  • RF POWER VDMOS TRANSISTOR,Silicon VDMOS and LDMOS transistors SP701 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. ...