PNP RF Transistor
This device MMBTH81 is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
...
NPN RF Transistor
This device MMBT5179 is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. ...
NPN RF Transistor
This device MMBTH10 is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. ...
NPN RF Transistor
This device MMBT918 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43.
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NPN RF Transistor
This device MPS5179 is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced ...
This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100 to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high ...
NPN RF Transistor
This device 2N5770 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
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NPN RF Transistor
This device MPSH10 is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. ...
NPN RF Transistor
This device PN5179 is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced ...
NPN RF Transistor MMBTH24 NPN General Purpose Amplifier
This device MMBTH24 is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift common-base ...
PNP RF Transistor
This device MPSH81 is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
...
NPN RF Transistor
This device MPSH11 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output ...
NPN RF Transistor
This device PN918 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43.
...
NPN RF Transistor MMBT5770 This device MMBT5770 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. ...
NPN RF Amplifier
This device PN3563 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
...
NPN RF Transistor
This device MMBTH11 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output ...
PNP General Purpose Amplifier
This device MPS6518 is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics.
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NPN RF Transistor
This device 2N3663 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
...
NPN Radio Frequency Transistor MPSH34, NPN General Purpose Amplifier
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift ...
NPN RF Transistor ,This device FPNH10 is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 A to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. ...
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift common-base VHF oscillator
applications with high ...
BFG198 NPN 8 GHz wideband transistor,NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
...
BFG403W NPN 17 GHz wideband transistor,NPN double polysilicon wideband transistor with buried
layer for low Voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
...
BFG410W NPN 22 GHz wideband transistor,NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
...
BFG424F NPN 25 GHz wideband transistor,NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore ...
BFG424W NPN 25 GHz wideband transistor,NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore ...
BFG425W NPN 25 GHz wideband transistor,NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
...
BFG480W NPN wideband transistor,NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
...
BFM505 Dual NPN wideband transistor,Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital ...
BFM520 Dual NPN wideband transistor,Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital ...
BFR505 NPN 9 GHz wideband transistor,The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the
RF front end in wideband applications in the GHz range, such as analog and digital
cellular telephones, cordless telephones (CT1, ...
BFR92AW NPN 5 GHz wideband transistor,Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
...
BFR93AW NPN 5 GHz wideband transistor,Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
...
BFS17W NPN 1 GHz wideband transistor,Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
...
BFT25A NPN 5 GHz wideband transistor,The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to 2 GHz.
The transistor is encapsulated in a 3-pin ...
BFT92W PNP 4 GHz wideband transistor,Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
...
BFT93W PNP 4 GHz wideband transistor,Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT93W uses the same crystal as the
SOT23 version, BFT93.
...
BLF3G21-30 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and ...
BLF3G22-30 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and ...
BLF404 UHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS
power transistor in an 8-lead SOT409A SMD package with
a ceramic cap.
...
BLF4G10-160 UHF power LDMOS transistor,160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport ...
BLF4G10LS-120 UHF power LDMOS transistor,120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
BLF4G10LS-160 UHF power LDMOS transistor,160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport ...
BLF4G20LS-110B UHF power LDMOS transistor,110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and ...
BLF4G20LS-130 UHF power LDMOS transistor,130 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport ...
BLF521 UHF power MOS transistor,Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless package,
with a ...
BLF546 UHF push-pull power MOS transistor,Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT268A ...
BLF548 UHF push-pull power MOS transistor,Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 ...
BLF647 UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
...
BLF6G10S-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 800 MHz
to 1000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and ...
BLF6G20-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and ...
BLF6G22-180P UHF power LDMOS transistor,180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport ...
BLF6G22-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
CAUTION:
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport ...
BLF861A UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
...
BLF872 UHF power LDMOS transistor,A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and ...
BLL1214-250 L-band radar LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.
...
BLL1214-35 L-band radar LDMOS driver transistor,Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
...
PBR941 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, ...
PBR951 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, ...
PRF947 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, ...
PRF949 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT416
(SC-75) package. The transistor is primarily intended for
wideband applications in the GHz range in the RF front
end of analog and digital cellular telephones, ...
PRF957 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, ...