• Product pinout
  • Description
  • KSC388,NPN Epitaxial Silicon Transistor
  • NPN Epitaxial Silicon Transistor KSC388 TV Final Picture IF Amplifier Applications
  • G = 33dB (TYP) at f=45MHz PE
  • Suffix -C means Center Collector (1. Emitter 2. Collector 3. Bas ...
  • KSC1674,NPN Epitaxial Silicon Transistor
  • NPN Epitaxial Silicon Transistor KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator
  • High Current Gain Bandwidth Product : f =600MHz (TYP.) T
  • Suffix -C means Center Collector (1. Emitter 2. Collector 3. Bas ...
  • MMBTH81,PNP RF Transistor
  • PNP RF Transistor This device MMBTH81 is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
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  • MMBT5179,NPN RF Transistor
  • NPN RF Transistor This device MMBT5179 is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. ...
  • MMBTH10,NPN RF Transistor
  • NPN RF Transistor This device MMBTH10 is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. ...
  • MMBT918,NPN RF Transistor
  • NPN RF Transistor This device MMBT918 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43.
    ...
  • MPS5179,NPN RF Transistor
  • NPN RF Transistor This device MPS5179 is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced ...
  • MMBTH10RG,NPN RF Transistor
  • NPN RF Transistor MMBTH10RG NPN RF Transistor
  • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high ...
  • 2N5770,NPN RF Transistor
  • NPN RF Transistor This device 2N5770 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
    ...
  • MPSH10,NPN RF Transistor
  • NPN RF Transistor This device MPSH10 is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. ...
  • KSC2786,NPN Epitaxial Silicon Transistor
  • NPN Epitaxial Silicon Transistor KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator
  • High Current Gain Bandwidth Product : f =600MHz (TYP) T
  • High Power Gain : G =22dB at f=100MHz PE ...
  • PN5179,NPN RF Transistor
  • NPN RF Transistor This device PN5179 is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced ...
  • MMBTH24,NPN RF Transistor
  • NPN RF Transistor MMBTH24 NPN General Purpose Amplifier
  • This device MMBTH24 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base ...
  • MPSH81,PNP RF Transistor
  • PNP RF Transistor This device MPSH81 is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
    ...
  • MPSH11,NPN RF Transistor
  • NPN RF Transistor This device MPSH11 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output ...
  • PN918,NPN RF Transistor
  • NPN RF Transistor This device PN918 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43.
    ...
  • MMBT5770,NPN RF Transistor
  • NPN RF Transistor MMBT5770 This device MMBT5770 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. ...
  • PN3563,NPN RF Amplifier
  • NPN RF Amplifier This device PN3563 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
    ...
  • MMBTH11,NPN RF Transistor
  • NPN RF Transistor This device MMBTH11 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output ...
  • MPS6518,PNP General Purpose Amplifier
  • PNP General Purpose Amplifier This device MPS6518 is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics.
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  • 2N3663,NPN RF Transistor
  • NPN RF Transistor This device 2N3663 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
    ...
  • MPSH34,NPN Radio Frequency Transistor
  • NPN Radio Frequency Transistor MPSH34, NPN General Purpose Amplifier
  • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift ...
  • KSC2755,NPN Epitaxial Silicon Transistor
  • NPN Epitaxial Silicon Transistor KSC2755 RF AMP, FOR VHF &TV TUNER
  • Low NF, High G PE
  • Forward AGC Capability to 30 dB
  • NF=2.0dB (TYP.), G =23dB (TYP.) at f=200MHz PE ...
  • FPNH10,NPN RF Transistor
  • NPN RF Transistor ,This device FPNH10 is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. ...
  • MPSH24,NPN RF Transistor
  • NPN RF Transistor MPSH24
  • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high ...
  • BFG198,BFG198 NPN 8 GHz Wideband Transistor
  • BFG198 NPN 8 GHz wideband transistor,NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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  • BFG424F,BFG424F NPN 25 GHz Wideband Transistor
  • BFG424F NPN 25 GHz wideband transistor,NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore ...
  • BFG424W,BFG424W NPN 25 GHz Wideband Transistor
  • BFG424W NPN 25 GHz wideband transistor,NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore ...
  • BFG480W,BFG480W NPN Wideband Transistor
  • BFG480W NPN wideband transistor,NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.
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  • BFM505,BFM505 Dual NPN Wideband Transistor
  • BFM505 Dual NPN wideband transistor,Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital ...
  • BFM520,BFM520 Dual NPN Wideband Transistor
  • BFM520 Dual NPN wideband transistor,Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital ...
  • BFR505,BFR505 NPN 9 GHz Wideband Transistor
  • BFR505 NPN 9 GHz wideband transistor,The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, ...
  • BFT25A,BFT25A NPN 5 GHz Wideband Transistor
  • BFT25A NPN 5 GHz wideband transistor,The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin ...
  • BLF3G21-30,BLF3G21-30 UHF Power LDMOS Transistor
  • BLF3G21-30 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF3G22-30,BLF3G22-30 UHF Power LDMOS Transistor
  • BLF3G22-30 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF4G10-160,BLF4G10-160 UHF Power LDMOS Transistor
  • BLF4G10-160 UHF power LDMOS transistor,160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF4G10LS-120,BLF4G10LS-120 UHF Power LDMOS Transistor
  • BLF4G10LS-120 UHF power LDMOS transistor,120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF4G10LS-160,BLF4G10LS-160 UHF Power LDMOS Transistor
  • BLF4G10LS-160 UHF power LDMOS transistor,160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF4G20LS-110B,BLF4G20LS-110B UHF Power LDMOS Transistor
  • BLF4G20LS-110B UHF power LDMOS transistor,110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF4G20LS-130,BLF4G20LS-130 UHF Power LDMOS Transistor
  • BLF4G20LS-130 UHF power LDMOS transistor,130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF521,BLF521 UHF Power MOS Transistor
  • BLF521 UHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless package, with a ...
  • BLF546,BLF546 UHF Push-pull Power MOS Transistor
  • BLF546 UHF push-pull power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268A ...
  • BLF548,BLF548 UHF Push-pull Power MOS Transistor
  • BLF548 UHF push-pull power MOS transistor,Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 ...
  • BLF647,BLF647 UHF Power LDMOS Transistor
  • BLF647 UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
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  • BLF6G10S-45,BLF6G10S-45 UHF Power LDMOS Transistor
  • BLF6G10S-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF6G20-45,BLF6G20-45 UHF Power LDMOS Transistor
  • BLF6G20-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF6G22-180P,BLF6G22-180P UHF Power LDMOS Transistor
  • BLF6G22-180P UHF power LDMOS transistor,180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF6G22-45,BLF6G22-45 UHF Power LDMOS Transistor
  • BLF6G22-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTION: This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF861A,BLF861A UHF Power LDMOS Transistor
  • BLF861A UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
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  • BLF872,BLF872 UHF Power LDMOS Transistor
  • BLF872 UHF power LDMOS transistor,A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and ...
  • BLL1214-250,BLL1214-250 L-band Radar LDMOS Transistor
  • BLL1214-250 L-band radar LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.
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  • PBR941,PBR941 UHF Wideband Transistor
  • PBR941 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, ...
  • PBR951,PBR951 UHF Wideband Transistor
  • PBR951 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, ...
  • PRF947,PRF947 UHF Wideband Transistor
  • PRF947 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, ...
  • PRF949,PRF949 UHF Wideband Transistor
  • PRF949 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT416 (SC-75) package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, ...
  • PRF957,PRF957 UHF Wideband Transistor
  • PRF957 UHF wideband transistor,Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, ...
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