16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETsThe RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as Switching Regulators switching convert-
ers, Motor Drivers and Relay Drivers This performance is
accomplished through a special Gate oxide design which
provides full rated conductance at Gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from Logic level (5V) integrated circuits. By Fairchild Semiconductor
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RFD16N03LSM Pb-Free | RFD16N03LSM Cross Reference | RFD16N03LSM Schematic | RFD16N03LSM Distributor |
RFD16N03LSM Application Notes | RFD16N03LSM RoHS | RFD16N03LSM Circuits | RFD16N03LSM footprint |