12a, 60v, 0.150 Ohm, N-channel Power Mosfets Corporation

These are N-Channel enhancement mode silicon Gate power eld effect Transistors RFD3055 RFD3055SM RFP3055 . They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as Switching Regulators switching convertors, Motor Drivers Relay Drivers and drivers for high power bipolar switching Transistors requiring high speed and low Gate drive power. These types CAN be operated directly from integrated circuits. By Intersil Corporation
RFD3055 's PackagesRFD3055 's pdf datasheet

RFD3055 Pinout, Pinouts
RFD3055 pinout,Pin out
This is one package pinout of RFD3055,If you need more pinouts please download RFD3055's pdf datasheet.

RFD3055 Application circuits
RFD3055 circuits
This is one application circuit of RFD3055,If you need more circuits,please download RFD3055's pdf datasheet.

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RFD3055 Application Notes RFD3055 RoHS RFD3055 Circuits RFD3055 footprint