4a, 60v, 0.600 Ohm, Logic Level, N-channel Power Mosfets Corporation

The RFD4N06L RFD4N06LSM are N-Channel enhancement mode silicon Gate power Field Effect Transistors specifically designed for use with Logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special Gate oxide design which provides full rated conduction at Gate biases in the 3-5 volt range, thereby facilitating true on-off power control from Logic circuit supply voltages. By Intersil Corporation
RFD4N06L 's PackagesRFD4N06L 's pdf datasheet
RFD4N06LSM




RFD4N06L Pinout, Pinouts
RFD4N06L pinout,Pin out
This is one package pinout of RFD4N06L,If you need more pinouts please download RFD4N06L's pdf datasheet.

RFD4N06L Application circuits
RFD4N06L circuits
This is one application circuit of RFD4N06L,If you need more circuits,please download RFD4N06L's pdf datasheet.


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