8a, 60v, 0.300 Ohm, P-channel Power Mosfets Corporation

These are P-Channel Power MOSFETs RFD8P06E manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as Switching Regulators switching converters, motor drivers, Relay Drivers and emitter switches for bipolar Transistors These Transistors CAN be operated directly from integrated circuits. The RFD8P06E RFD8P06ESM and RFP8P06E incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD By Intersil Corporation
RFD8P06E 's PackagesRFD8P06E 's pdf datasheet
RFP8P06E TO-220AB
RFD8P06ESM TO-252




RFD8P06E Pinout, Pinouts
RFD8P06E pinout,Pin out
This is one package pinout of RFD8P06E,If you need more pinouts please download RFD8P06E's pdf datasheet.

RFD8P06E Application circuits
RFD8P06E circuits
This is one application circuit of RFD8P06E,If you need more circuits,please download RFD8P06E's pdf datasheet.


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