60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFETThe RFG60P06E P-Channel Power MOSFET RFG60P06E is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as Switching Regulators switching converters, motor
drivers and Relay Drivers These Transistors CAN be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD By Fairchild Semiconductor
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RFG60P06E Pb-Free | RFG60P06E Cross Reference | RFG60P06E Schematic | RFG60P06E Distributor |
RFG60P06E Application Notes | RFG60P06E RoHS | RFG60P06E Circuits | RFG60P06E footprint |