10a, 500v, Fast Switching N-channel Enhancement-mode Power Mosfets Corporation

The RFV10N50BE is an N-Channel fast switching MOSFET transis- tor RFV10N50BE that is designed for Switching Regulators inverters and motor driv- ers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET a control MOSFET and ESD protec- tion Diodes As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly dis- charge the Gate of the main MOSFET Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the Gate drive circuit to avoid volt- age induced transients from the output circuit during switching. The RFV10N50BE CAN be operated directly from integrated circuits. By Intersil Corporation
RFV10N50BE 's PackagesRFV10N50BE 's pdf datasheet

RFV10N50BE Pinout, Pinouts
RFV10N50BE pinout,Pin out
This is one package pinout of RFV10N50BE,If you need more pinouts please download RFV10N50BE's pdf datasheet.

RFV10N50BE Application circuits
RFV10N50BE circuits
This is one application circuit of RFV10N50BE,If you need more circuits,please download RFV10N50BE's pdf datasheet.

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