2a, 60v, 0.160 Ohm, Logic Level, N-channel Power Mosfet Corporation

The RFW2N06RLE N-Channel, Logic level, ESD protected, Power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed for use with Logic level (5V) driving sources in applications such as programmable controllers, automotive switching, Switching Regulators switching converters, motor and Relay Drivers and emitter switches for Bipolar Transistors This performance is accomplished through a special Gate oxide design which provides full rated conductance at Gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from Logic circuit supply voltages. By Intersil Corporation
RFW2N06RLE 's PackagesRFW2N06RLE 's pdf datasheet



RFW2N06RLE Pinout, Pinouts
RFW2N06RLE pinout,Pin out
This is one package pinout of RFW2N06RLE,If you need more pinouts please download RFW2N06RLE's pdf datasheet.

RFW2N06RLE Application circuits
RFW2N06RLE circuits
This is one application circuit of RFW2N06RLE,If you need more circuits,please download RFW2N06RLE's pdf datasheet.


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