RMPA1966 I-Lo TM WCDMA Band II Power Amplifier Module, 1850-1910 MHzThe RMPA1966 Power Amplier Module (PAM) is
Fairchilds latest innovation in 50 matched, surface
mount modules targeting UMTS/WCDMA/HSDPA
applications. Answering the call for ultra-low DC power
consumption and extended battery life in portable
electronics, the RMPA1966 uses novel proprietary
circuitry to dramatically reduce amplier current at low to
medium RF output power levels (< +16dBm), where the
handset most often operates. A simple two-state Vmode
control is all that is needed to reduce operating current
by more than 60% at 16dBm output power, and
quiescent current (Iccq) by as much as 70% compared
to traditional power-saving methods. No additional circuitry,
such as DC-to-DC converters, are required to achieve this
remarkable improvement in amplier efciency. Further,
the 4 x 4 x 1.0 mm LCC package is pin-compatible and a
drop-in replacement for last generation 4 x 4 mm PAMs
widely used today, minimizing the design time to apply
this performance-enhancing technology. The multi-stage
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
manufactured using Fairchild RFs InGaP Heterojunction
Bipolar Transistor (HBT) process. By Fairchild Semiconductor
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