Dual Band WCDMA Power Amplifier Module 1850 To 1910 MHz And 1920 To 1980 MHz

The RMPA2265 power amplier module (PAM) is designed for WCDMA/HSDPA applications in both the 18501910 and 1920 1980 MHz bands. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added ef- ciency and excellent linearity are achieved using Fairchilds InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. By Fairchild Semiconductor