TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current driving is possible. Since bias resisters are built in the Transistor the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an assembly are possible. Many kinds of resistance value are lined up in order to support various kinds of circuit design. Complementary to RN2321A RN2327A Low VCE(sat) enable to be low power dissipation on high current driving. By Toshiba Semiconductor
RN1321A 's PackagesRN1321A 's pdf datasheet
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A




RN1321A Pinout, Pinouts
RN1321A pinout,Pin out
This is one package pinout of RN1321A,If you need more pinouts please download RN1321A's pdf datasheet.

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