COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE COMPOSITE Transistor WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE, : resistance built-in Transistor RT2N09M DESCRIPTION RT2N09M is a composite Transistor with built-in bias resistor By ISAHAYA ELECTRONICS CORPORRATION

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• RT2P09M, COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE
• RT2N12M, COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE
• RT2P03M, COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE
• RT2N65M, Composite Transistor For Muting Application Silicon NPN Epitaxial Type
• RT2N63M, Composite Transistor For Muting Application Silicon NPN Epitaxial Type
• RT2P03M, COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE
• EMB19, General Purpose (dual Digital Transistors) - Rohm
• RT3P66M, Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• RT1P14H, Resistance Built-in Transistor:PNP Type
• DTD123TS, Digital Transistors (built-in Resistor) - Rohm
• RT2P21M, COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE
• RT1P250, Resistance Built-in Transistor:PNP Type
• MJE702, Monolithic Construction With Built-in Base- Emitter Resistors

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