These devices MRA4003T3 are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales ...
The FFP08S60S is stealth rectifier with soft recovery characteristics
(trr<30ns). They has half the recovery time of hyperfast
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction. This device is intended for use as ...
4A, 600V STEALTH II Rectifier FFP04S60S
The FFP04S60S is STEALTH II rectifier with soft recover
characteristics. It is silicon nitride passivated ion-implanted epi
taxial planar construction.
This device is intended for use as freewheeling of boost ...
The FFH15S60S is stealth2 rectifier with soft recovery characteristics.
It is silicon nitride passivated ion-implanted epitaxial
planar construction. This device is intended for use as freewheeling of boost diode in
switching power supplies and other ...
4A, 600V STEALTH II Rectifier FFPF04S60S
The FFPF04S60S is STEALTH II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost ...
The FFH30S60S is stealth2 rectifier with soft recovery characteristics.
It is silicon nitride passivated ion-implanted epitaxial
planar construction. This device is intended for use as freewheeling of boost diode in
switching power supplies and other ...
The FFP30S60S is STEALTH II rectifier with soft recovery
charac-teristics. It is silicon nitride passivated ion-implanted epitaxial
planar construction. This device is intended for use as freewheeling of boost diode in
switching power supplies and ...
The STTH60R04 series uses ST\'s new 400 V
planar Pt doping technology. The STTH60R04 is
specially suited for switching mode base drive and
transistor circuits. ...
