• Product pinout
  • Description
  • MRA4003T3,Surface Mount Standard Recovery Power Rectifier
  • These devices MRA4003T3 are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales ...
  • FFP08S60S,8A, 600V STEALTH II Rectifier
  • The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as ...
  • FFP04S60S,4A, 600V STEALTH II Rectifier
  • 4A, 600V STEALTH II Rectifier FFP04S60S The FFP04S60S is STEALTH II rectifier with soft recover characteristics. It is silicon nitride passivated ion-implanted epi taxial planar construction. This device is intended for use as freewheeling of boost ...
  • FFH15S60S,15A, 600V STEALTH II Rectifier
  • The FFH15S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as freewheeling of boost diode in switching power supplies and other ...
  • FFPF04S60S,4A, 600V STEALTH II Rectifier
  • 4A, 600V STEALTH II Rectifier FFPF04S60S The FFPF04S60S is STEALTH II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost ...
  • FFH30S60S,30A, 600V STEALTH II Rectifier
  • The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as freewheeling of boost diode in switching power supplies and other ...
  • FFP30S60S,30A, 600V STEALTH II Rectifier
  • The FFP30S60S is STEALTH II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as freewheeling of boost diode in switching power supplies and ...
  • STTH60R04,Ultrafast Recovery Diode
  • The STTH60R04 series uses ST\'s new 400 V planar Pt doping technology. The STTH60R04 is specially suited for switching mode base drive and transistor circuits. ...